Psemi Corporation

Peregrine Semiconductor Corporation

Ravindranath D Shrivastava

Fleming Lam

Payman Shanjani

Peter Bacon

Eric S Shapiro

Alper Genc

Matt Allison

Simon Edward Willard

Kristian N Madsen

Khushali Shah

Rong Jiang

Parvez Daruwalla

Raul Inocencio Alidio

Chengkai Luo

A phase shifter cell and multiple coupled phase shifter cells that mitigate signal glitches arising from phase state changes by a combination of design architecture and control signal timing. Specifically, one or more of the following three concepts are employed to mitigate insertion loss glitches and control phase behavior during phase state transitions: the timing of switching for each switched half-cell (e.g., including series and/or shunt reactance elements, such as inductors and/or capacitors) within a phase shifter cell is controlled in such a way that the reactance elements do not all switch at the same time; use of a 'make before break' timing scheme for combination or “multi-state” phase shifter cells; and/or arranging the timing of each phase shifter cell in a set of multiple coupled phase shifter cells such that the individual cells do not all switch at the same time.

Glitch mitigation in switched reactance phase shifters

A FET switch stack has a stacked arrangement of FET switches, a gate resistor network with ladder resistors and common gate resistors, and a gate resistor bypass arrangement. The bypass arrangement has a first set of bypass switches connected across the gate resistors and a second set of bypass switches connected across the ladder resistors. Bypass occurs during at least a portion of the transition state of the stacked arrangement of FET switches.

Gate resistive ladder bypass for RF FET switch stack

Methods and devices to reduce glitches in phase shifters implementing high isolation switches are disclosed. Such glitches occur at the output of the phase shifters when transitioning from one phase shift to another. The disclosed method implements delays in various steps of the phase shifter transitions. Exemplary embodiments implementing single-pole multi-throw are provided and exemplary performance of the disclosed methods are also presented. The described methods are also applicable to multi-step attenuators.

Glitch reduction in phase shifters

A FET switch stack and a method to operate a FET switch stack. The FET switch stack includes a stacked arrangement of body bypass FET switches connected across respective common body resistors. The body bypass FET switches bypass the respective common body resistors during the OFF steady state of the FET switch stack and do not bypass the respective common body resistors during the ON steady state.

Body resistor bypass for RF FET switch stack

Methods and devices to reduce or remove slumps in power supplies are disclosed. The disclosed teachings can serve various applications, such as applications implementing RF switches. Using such teachings, an integrated method can benefit from two different modes of operation where either an external or an internal charge pump can be used to provide a desired negative voltage to various components within the integrated circuit. This can be done by disposing a larger load capacitor outside the integrated circuit and without compromising any die space requirement.

Power supply slump reduction methods and devices

Methods and devices to improve the switching speed of radio frequency FET switch stacks are disclosed. The described methods and devices are based on bypassing drain-sources resistors when the FET switch stack is transitioning from an ON to an OFF state. Several implementations of the disclosed teachings are also presented.

Bypass circuitry to improve switching speed

Fail-safe methods and devices to protect the receiver of a transceiver in the event of an antenna failure are disclosed. The described devices implement inductive and capacitive elements to replace switches and can be used in any communication system or electronic circuit where the protection of a portion of the device from higher power signals is required. The inductive elements can be implemented using already existing inductors that are constituents of the receiver matching network. Configurations with off-chip capacitive or inductive components are also possible.

RF circuit protection devices and methods

An apparatus for reducing switching time of RF FET switching devices is described. A FET switch stack includes a stacked arrangement of FET switches and a plurality of gate feed arrangements, each coupled at a different height of the stacked arrangement. A circuital arrangement with a combination of a series RF FET switch and a shunt RF FET switch, each having a stack of FET switches, is also described. The shunt switch has one or more shunt gate feed arrangements with a number of bypass switches that is less than the number of FET switches in the shunt stack.

Methods and apparatus for reducing switching time of RF FET switching devices

Circuits and methods for improving the noise figure (NF) of an amplifier, particularly an LNA, in high-gain modes while improving the IIP3 of the amplifier in low-gain modes. The source of an amplifier common-source FET is coupled to circuit ground thorough a degeneration circuit comprising a two-port inductor and a bypass switch coupled in parallel with the inductor. A switched feedback circuit is coupled between the gate of the common-source FET and a feedback node in the amplifier output signal path. During a low gain mode, the inductor is entirely bypassed and the enabled feedback circuit lowers the input impedance of the common-source FET and reduces the gain of the amplifier circuit, essentially eliminating the need for a degeneration inductor. During a high gain mode, the source of the common-source FET is coupled to circuit ground through the inductor and the feedback circuit is disabled. Other gain modes are supported.

Amplifier gain-tuning circuits and methods

A common gate resistor bypass arrangement for a stacked arrangement of FET switches, the arrangement including a series combination of an nMOS transistor and a pMOS transistor connected across a common gate resistor. During at least a transition portion of the transition state of the stacked arrangement of FET switches, the nMOS transistor and the pMOS transistor are both in an ON state and bypass the common gate resistor. On the other hand, during at least a steady state portion of the ON steady state and the OFF steady state of the stacked arrangement of FET switches, one of the nMOS transistor and the pMOS transistor is in an OFF state and the other of the nMOS transistor and the pMOS transistor is in an ON state, thus not bypassing the common gate resistor.

Gate resistor bypass for RF FET switch stack

A self-matching phase shifter/attenuator including several incremental impedance matched phase shifter/attenuator elements is disclosed. Each incremental impedance matched phase shifter element comprises a reactive component (such as either a capacitor or inductor) that can be coupled in shunt to the signal path. The shunt reactive component is coupled in series with a ground switch. When closed, the ground switch connects the shunt reactive component to ground. When the ground switch is open, the switch removes the shunt reactive component from the circuit. In addition, each incremental impedance matched phase shifter element comprises a series reactive component having a reactance that is typically equal and inverse of that of the shunt reactive component.

Growing community of inventors

San Diego, CA, United States of America

Ravindranath D Shrivastava