Applied Materials, Inc.

Ravindra Patil

Nilesh Chimanrao Bagul

Hemantha Raju

Mahesh Arcot

Sankesha Bhoyar

Robert Jan Visser

Prerna Sonthalia Goradia

Geetika Bajaj

Joe Griffith Cruz

Stefan Keller

Bipin Thakur

Vikas Gujar

Systems for prequalifying components for a processing chamber are described. The systems may be used to clean particulates from chamber parts and concurrently quantify the cleanliness. The systems may be used to qualify replacement parts before sending to a customer site for installation. The systems have three adjacent compartments separated by impermeable barriers. All three compartments are filled with liquid while cleaning a chamber component. The center compartment contains a submerged component for cleaning and qualifying. Two compartments on either side of the center compartment are configured with submerged ultrasonic transducers to deliver ultrasonic energy to either side of the component being cleaned and prequalified. A liquid pump is connected to the cleaning tub to recirculate water from the cleaning bath and another liquid pump is configured to remove a small amount of the cleaning bath to sample particulates.

Methods and systems for liquid particle prequalification

Improved methods for chemically etching silicon are provided herein. In some embodiments, a method of etching a silicon material includes: (a) exposing the silicon material to a halogen-containing gas; (b) evacuating the halogen-containing gas from the semiconductor processing chamber; (c) exposing the silicon material to an amine vapor to etch a monolayer of the silicon material; (d) evacuating the amine vapor from the semiconductor processing chamber and; (e) optionally repeating (a)-(d) to etch the silicon material to a predetermined thickness.

Methods for chemical etching of silicon

Methods for depositing films using hot wire chemical vapor deposition (HWCVD) processes are provided herein. In some embodiments, a method of operating an HWCVD tool may include providing hydrogen gas (H) to a filament disposed in a process chamber of the HWCVD tool for a first period of time; and flowing current through the filament to raise the temperature of the filament to a first temperature after the first period of time.

Methods for enhancing tantalum filament life in hot wire chemical vapor deposition processes

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Thane, India

Ravindra Patil