Stmicroelectronics International N.v.

Stmicroelectronics (rousset) Sas

Ravinder Kumar

Nicolas Demange

Manoj Kumar

Saiyid Mohammad Irshad Rizvi

Paras Garg

Kailash Kumar

Rajesh Yadav

An integrated circuit includes an output pad, and I/O driver that drives data to the output pad, and a predriver that controls the I/O driver. The integrated circuit includes maximum voltage generator that receives a first supply voltage and a second supply voltage and outputs to the predriver a maximum voltage corresponding to the higher of the first supply voltage and the second supply voltage.

Integrated circuit with output driver that compensates for supply voltage variations

An integrated circuit includes an overvoltage protection circuit. The overvoltage protection circuit detects overvoltage events at a pad of the integrated circuit. The overvoltage protection circuit generates a max voltage signal that is the greater of the voltage at the pad and a supply voltage of the integrated circuit. The overvoltage protection circuit disables a PMOS transistor coupled to the pad by supplying the max voltage signal to the gate of the PMOS transistor when an overvoltage event is present at the pad.

Overvoltage protection circuit for a PMOS based switch

Disclosed herein is an electronic device including an IO node, with a receiver coupled to receive input from the IO node. A transmitter driver has a first n-channel DMOS with a source coupled to the IO node. A pass gate circuit decouples the IO node from the receiver based upon presence of a negative voltage at the IO node and couples the IO node to the receiver based upon lack of presence of the negative voltage at the IO node. A transmit protection circuit applies the negative voltage from the IO node to the gate and bulk of the first n-channel DMOS based upon the presence of the negative voltage at the IO node.

Negative voltage tolerant IO circuitry for IO pad

A level shifting circuit receives a first input signal and complement of the first input signal as inputs and generates a level shifted first output signal and complement of the first output signal as outputs. The level shifting circuit includes a number of transistors that support body biasing. One set of body bias signals applied to certain ones of those transistors is generated as a function of the logical combination of the first input signal and the first output signal. Another set of body bias signals applied to certain other ones of those transistors is generated as a function of the logical combination of the complement of the first input signal and the complement of the first output signal. The conditional body bias applied to the transistors of the level shifting circuit makes the circuit operational for level shift at very low supply voltage levels.

Level shifting circuit with conditional body biasing of transistors

A drive circuit includes a first drive transistor coupled between a first supply node and an output pad of an integrated circuit and a second drive transistor coupled between a second supply node and the output pad. The first drive transistor and second drive transistors are controlled by a control signal. A body bias generator circuit is configured to apply a variable first body bias to the first transistor and a variable second body bias to the second transistor. The variable first and second body biases are generated as a function of the control signal and a voltage at the output pad.

Driver circuit including driver transistors with controlled body biasing

A Schmitt Trigger is implemented in FDSOI technology. The Schmitt Trigger includes a first inverting stage having an NMOS and PMOS transistor having their drains tied together. The NMOS and PMOS transistor each have a first gate coupled to the input voltage and a back gate coupled to the output of the Schmitt Trigger.

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Ambala, India

Ravinder Kumar