Applied Materials, Inc.

Ravi Jallepally

Sundar Ramamurthy

Joseph Michael Ranish

Aaron Muir Hunter

Muhammad M Rasheed

Balasubramanian Ramachandran

Ilker Durukan

Liang-Yuh Chen

Joseph Yudovsky

Jun Zhao

Amir Hamed Al-Bayati

Alain Duboust

Maitreyee Mahajani

Yi-Chiau Huang

Kevin Griffin

Yashraj K Bhatnagar

Norman L Tam

Turgut Sahin

Agus Sofian Tjandra

Daniel A Carl

Gary Eugene Miner

Brian L Haas

Houda Graoui

Shih-Hung Li

Guangcai Xing

Brendan McDougall

Ryan C Boas

David B Noble

Corina Elena Tanasa

Andrew C Sherman

Claudia Lai

Ramachandran Balasubramanian

Raman Achutharaman

Joseph M Spear

Nathan D'Astici

Outer distribution rings and gas distribution apparatus with outer distribution rings to deliver a gas flow to a process region of a process chamber are described. The outer distribution rings include at least one plenum in fluid communication with a plurality of openings forming a plurality of trenches to allow gas to flow from the plenum through the openings and down an inner peripheral face of the outer distribution ring.

Apparatus and method for providing a uniform flow of gas

The present invention generally provides method and apparatus for non-contact temperature measurement in a semiconductor processing chamber. Particularly, the present invention provides methods and apparatus for non-contact temperature measurement for temperature below 500&#xb0; C. One embodiment of the present invention provides an apparatus for processing semiconductor substrates. The apparatus comprises a target component comprises a material with higher emissivity than the one or more substrates.

Chamber components with increased pyrometry visibility

A thermal processing chamber includes a substrate support rotating about a center axis and a lamphead of plural lamps in an array having a predetermined difference in radiance pattern between them. The radiance pattern includes a variation in diffuseness or collimation. In one embodiment, the center lines of all of the lamps are disposed away from the center axis. The array can be an hexagonal array, in which the center axis is located at a predetermined position between neighboring lamps.

Lamp array for thermal processing exhibiting improved radial uniformity

Method and apparatus for obtaining a tailored heat transfer profile in a chamber housing a microprocessor manufacturing process, including estimating heat transfer properties of the chamber; estimating heat absorptive properties of a wafer; adjusting the physical characteristics of the chamber to correct the heat transfer properties; and utilizing the chamber for manufacturing microprocessors.

Tailored temperature uniformity

Lamp based spike annealing was improved to address the aggressive requirements of &#x3c;100 nm Ultra Shallow Junction (USJ) technologies. Improvements focused on enhancing cool down rates, and thereby improving spike sharpness. Boron ion implanted substrates with varying ion-implanted energy and dose were then annealed to characterize the improvements in spike annealing. A greater than 10% improvement in sheet resistance and junction depth was realized on substrates that were annealed with the improved spike profile. The improved spike anneal had the same comparable uniformity to the standard spike anneal.

Advances in spike anneal processes for ultra shallow junctions

Method and apparatus for depositing layers by atomic layer deposition. A virtual shower curtain is established between the substrate support and chamber to minimize the volume in which the reactants are distributed. A showerhead may be used to allow closer placement of the substrate thereto, further reducing the reaction volume. Zero dead space volume valves with close placement to the chamber lid and fast cycle times also improve the cycle times of the process.

Apparatus and method for fast-cycle atomic layer deposition

An apparatus and method for exposing a substrate to plasma including a first reaction chamber adapted to generate a plasma comprising ions and radicals and a second reaction chamber coupled to the first reaction chamber and adapted to house a substrate at a sight in the second reaction chamber. The second reaction chamber is coupled to the first reaction chamber by an inlet member and radicals of the plasma flow through the inlet member into the second reaction chamber.

Apparatus for exposing a substrate to plasma radicals

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Santa Clara, CA, United States of America

Ravi Jallepally