Newport Fab, LLC

Tower Semiconductor Ltd.

Amazon Technologies, Inc.

Rassul Karabalin

David J Howard

Yakov Roizin

Oskar Jon Painter

Michael J DeBar

William M Jones

Patricio Arrangoiz Arriola

Andrew Joseph Keller

Nasser Alidoust

David John Perello

Gregory Peairs

Hesam Moradinejad

Gregory Scott Maccabe

Matthew Sullivan Hunt

A fabrication method and associated apparatus is disclosed where an electromechanical resonator made out of lithium niobate is fabricated on the same substrate as a Josephson Junction-based transmon qubit. The starting material may be a high resistivity silicon wafer with a thin layer of lithium niobate (LiNbO¬). The fabrication method may include removing lithium niobate selectively from the substrate to preserve the quality of the substrate. The selective removal maintains defect free qualities of the silicon surface, thus enabling the fabrication of high performance Josephson Junction-based transmon qubit on the surface.

Method for producing transmon qubit and lithium niobate resonator on the same substrate

A hybrid Micro-Electro-Mechanical-System-Floating-Gate (MEMS-FG) device includes an electrically isolated non-volatile memory (floating) structure including a polysilicon gate structure connected by a metal via to a fixed electrode, where the polysilicon gate structure also forms the gate of an NVM cell, and the fixed electrode forms part of a lever-type or membrane-type ohmic MEMS switch. An initial charge is written before each sensing operation onto the floating structure by way of the NVM cell. During each sensing operation, sensor data is effectively written directly onto the NVM cell by way of either maintaining or discharging the initial charge, where discharge of the initial charge occurs when a predetermined event (e.g., contact by a fingerprint ridge) produces an actuating force that biases a movable electrode of the MEMS switch against the fixed electrode. The sensor data is read out from the NVM cell after each sensing operation.

Hybrid MEMs-floating gate device

A solid-state fingerprint sensor including an array of pixels, each pixel including an electrically isolated NVM structure, a security NVM cell and a normally-open MEMS switch. The electrically isolated NVM structure includes a polycrystalline silicon gate structure connected by a metal via structure to a fixed electrode that forms part of the MEMS switch. Initial charges stored on the electrically isolated NVM structures before each sensing operation are discharged to ground by the MEMS switch when a fingerprint ridge is aligned with the pixel and produces an applied actuating force on the MEMs switch. Final pixel charge values (i.e., either the initial charge or no charge) stored on each electrically isolated NVM structure after each sensing operation are encrypted using security bits stored on the security NVM cells such that only encrypted image data is transmitted from the pixels to external circuitry.

Fingerprint sensor with direct recording to non-volatile memory

An RF SOI switch includes patterned or self-aligned low-k features (i.e., low-k polymer structures or voids) in the PMD and/or subsequently formed inter-metal dielectric layers to reduce capacitive coupling. All portions of the dielectric layers through which metal contact/via structures pass are pre-designated as reserved regions, and formation of the low-k features is restricted to interstitial regions located between adjacent reserved regions. After the low-k features are formed, dielectric material is deposited into all reserved regions, and then the metal contact/via structures are formed according to standard practices through the dielectric material disposed in the reserved regions. The low-k features are formed by polymer material sandwiched between two passivation layers. Optional openings are formed through the upper passivation layer, and then the polymer material is asked out to generate void-type features. Optionally, polymer is spin-coated over the metal line structures, then etched back to form self-aligned low-k features.

RF SOI switches including low dielectric constant features between metal line structures

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Huntington Beach, CA, United States of America

Rassul Karabalin