Advanced Micro-fabrication Equipment Inc. China

Rason Zuo

Dee Wu

Tuqiang Q Ni

Tuqiang Ni

Xingjian Chen

Shenjian Liu

Zengdi Lian

Lei Wan

Yu Guan

Hiroshi Iizuka

Kui Zhao

Ning Zhou

Sha Rin

Kelvin Chen

Jiangtao Pei

Yuejun Gong

Yilong Su

Miaojuan Chen

Disclosed are a temperature control apparatus for semiconductor processing equipment and a corresponding temperature control method, wherein each heating element in each row or each column in a heating element matrix forms a power return circuit with a same power source, respectively, and a same switch module is provided for the power return circuits of all heating elements in each column or each row of the heating element matrix; the input powers to the heating elements in an entire row or column controlled by each power output port of the power source are adjusted by adjusting the output power magnitude of the corresponding power source, and conduction/disconnection of the power return circuits of an entire column or row controlled by each switch module is controlled by controlling ON/OFF of each switch module. The present disclosure reduces circuit complexity and saves costs; the present disclosure reduces temperature control complexity while guaranteeing temperature control accuracy, thereby achieving a uniform and flexible temperature control result.

Temperature control apparatus for semiconductor processing equipment, and temperature control method for the same

Method for multi-zone temperature control system having temperature control matrix and gate driver; N*M temperature control modules form N-row M-column matrix, power supply line, and power return line; each temperature control module comprising: a temperature control unit adapts to be heated up by electrical power for temperature controlling; semiconductor switch provided with a gate electrode connected with the gate driver, two ends of the gate being connected with the power supply line, and the power return line through the temperature control unit, respectively. In the temperature control matrix, one ends, which are connected with a power return line, of the temperature control units of temperature control modules in a same row or same column are serially connected, and connected with the power supply line; one ends, which are connected with the power supply line at same row or same column are serially connected, and connected with the power supply line.

Control method for multi-zone active-matrix temperature control in plasma processing apparatus

Disclosed are a bottom electrode assembly, a plasma processing apparatus, and a method of replacing a focus ring, wherein the bottom electrode assembly comprises: a base for supporting a wafer to be processed; a focus ring provided surrounding the outer periphery of the base; a cover ring disposed beneath the focus ring, a plurality of recesses being arranged along the circumferential direction of the cover ring; moving blocks provided in the recesses, an inner top corner of each moving block being provided with a step, the step being configured to support part of the focus ring; and a drive device connected to the moving blocks to activate the moving blocks to drive the focus ring to move up and down. With the bottom electrode assembly, replacement of the focus ring can be performed without opening the process chamber.

Bottom electrode assembly, plasma processing apparatus, and method of replacing focus ring

Disclosed are a liner assembly for vacuum treatment apparatuses and a vacuum treatment apparatus, wherein the liner assembly for vacuum treatment apparatuses comprises: an annular liner including a sidewall protection ring and a support ring which are interconnected, the outer diameter of the support ring being greater than that of the sidewall protection ring, the annular liner enclosing a treating space; and a gas channel provided in the support ring, the gas channel communicating with the treating space. The liner assembly for vacuum treatment apparatuses offer an improved performance.

Liner assembly for vacuum treatment apparatus, and vacuum treatment apparatus

Disclosed are a corrosion-resistant gas delivery assembly and a plasma processing apparatus. An inlet gas delivery component and a gas diffusion component are combined correspondingly with an inlet gas accommodation hole and a diffusion accommodation space that are arranged in a liner body, to form a multi-component structural configuration, which avoids direct contact of the process gas with the liner body due to liner body surface defects caused by high temperature. The advantages as offered include: effectively preventing the process gas from corroding a gas delivery assembly and the plasma processing apparatus, and solving the problems such as metal contamination and solid particle contamination in the reaction chamber caused by the corrosive fraction in the process gas; besides, the multi-component structural configuration facilitates routine maintenance.

Corrosion-resistant gas delivery assembly, and plasma processing apparatus

The present invention relates to a dual-station vacuum processor that pumps uniformly, comprising two vacuum processing chambers that may act as a process processing chamber, and an offset-pumping port and a vacuum pump which are common to and communicate with the two vacuum processing chambers, wherein a damper having a set thickness in a vertical direction is provided in a region proximal to the offset-pumping port in each vacuum processing chamber, so as to lower a pumping rate of gas at the pumping port proximal end and balance the pumping rate with the pumping rate of the gas at the pumping port distal end, thereby ameliorating the impact of chamber offset on the uniformity process processing. The present invention may further provide, in a rib as the damper, a channel in communication with the atmospheric environment outside of the chamber, so as to facilitate connection between a cable pipeline in the chamber and the outside.

Uniform pumping dual-station vacuum processor

Embodiments of the present disclosure disclose a plasma process apparatus with low particle contamination and a method of operating the same, wherein the plasma process apparatus comprises a chamber body and a liner, wherein a dielectric window is provided above the liner; the chamber body, the liner, and the dielectric window enclose a reaction space; a base for placing a wafer is provided at a bottom portion inside the reaction space; a vacuum pump device for pumping a gas out of the reaction space and maintaining a low pressure therein is provided below the base; a shutter for shuttering between an opening on a chamber body sidewall and an opening on a liner sidewall is provided inside the chamber body, for blocking contamination particles in the gas from flowing from a transfer module to the reaction space; a groove is provided at a lower portion of the liner, wherein a flowing space enclosed by a liner outer wall below the shutter and a chamber body inner wall is in communication with an inner space of the liner via the groove to form a gas flow path, such that the contamination particles entering the flowing space are pumped away by the vacuum pump device via the gas flow path. The present disclosure may not only keep the current wafer free from being contaminated, but also may reduce contamination for a next wafer transfer; besides, it enables introduction of clean air to make the contamination particles carried out of the reaction space with a more significant effect and a higher efficiency.

Plasma process apparatus with low particle contamination and method of operating the same

Disclosed is a corrosion-resistant structure for a gas delivery system in a plasma processing apparatus. By providing a plating layer of corrosion-resistant material at the parts including the gas channel to avoid reacting with the delivered corrosive gas, metal and particle contaminations are reduced. By reversely mounting nozzles such that they reliably cover the plating layer inside the gas outlet holes, the disclosure prevents the corrosion-resistant material from being damaged by the plasma generated inside the cavity. By forming a corrosion-resistant yttrium oxide coating at the surfaces of the nozzles exposed to the cavity, the disclosure prevents the plasma from eroding the nozzles. The disclosure further leverages a flexible corrosion-resistant material, such as Teflon, to the sealing surfaces of the liner in contact with the dielectric window and the cavity, which improves the overall sealing effect of the liner. The disclosure may effectively enhance the corrosion-resistant and sealing properties of the liner and prolong its service life, as well as improving operating stability of the plasma processing apparatus.

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Shanghai, China

Rason Zuo