The University of North Carolina at Charlotte

Georgia State University Research Foundation, Inc.

Raphael Tsu

Yong Zhang

John Hudak

Naili Yue

Wattaka Sitapura

Nikolaus Dietz

Michael A Fiddy

Tsinghua Her

Ian T Ferguson

Ian Ferguson

A semiconductor junction may include a first semiconductor material and a second material. The first and the second semiconductor materials are extrinsically undoped. At least a portion of a valence band of the second material has a higher energy level than at least a portion of the conduction band of the first semiconductor material (type-III band alignment). A flow of a majority of free carriers across the semiconductor junction is diffusive. A region of generation and/or recombination of a plurality of free carriers is confined to a two-dimensional surface of the second material, and at the interface of the first semiconductor material and the second material.

Incoherent type-III materials for charge carriers control devices

A semiconductor junction may include a first layer and a second layer. The first layer may include a first semiconductor material and the second layer may be deposited on the first layer and may include a second material. The valence band maximum of the second material is higher than a conduction band minimum of the first semiconductor material, thereby allowing a flow of a majority of free carriers across the semiconductor junction between the first and second layers to be diffusive.

Type III hetrojunction&#x2014;broken gap HJ

Graphene is used as an interfacial layer to grow Si and other semiconductors or crystalline materials including two-dimensional Si and other structures on any foreign substrate that can withstand the growth temperature without the limitation matching condition typically required for epitaxial growth.

Growth of semiconductors on hetero-substrates using graphene as an interfacial layer

A multilayered structure is provided. The multilayered structure may include a silicon substrate and a film of gadolinium oxide disposed on the silicon substrate. The top surface of the silicon substrate may have silicon orientated in the 100 direction (Si(100)) and the gadolinium oxide disposed thereon may have an orientation in the 100 direction (GdO(100)).

Enhanced electron mobility at the interface between GD2O3(100)/N-SI(100)

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Huntersville, NC, United States of America

Raphael Tsu