L'air Liquide, Soci&#xe9;t&#xe9; Anonyme Pour L'etude Et L'exploitation Des Proc&#xe9;d&#xe9;s Georges Claude

Raphael Rochat

Jean-Marc Girard

Nicolas Blasco

Antonio Sanchez

Jooho Lee

Zhiwen Wan

Rocio Alejandra Arteaga Muller

Santiago Marques-Gonzalez

Clément Lansalot-Matras

Changhee Ko

Rocio Arteaga

Disclosed are Group 6 transition metal-containing thin film forming precursors to deposit Group 6 transition metal-containing films on one or more substrates via vapor deposition processes.

Group 6 transition metal-containing compositions for vapor deposition of group 6 transition metal-containing films

To provide a film forming material and a film forming process for forming, at a lower temperature, a Ge-containing Co film including a desired amount of Ge. A film forming material for forming a Ge-containing Co film according to the invention is represented by either formula (1) or formula (2) below RRRGe&#x2014;Co(CO)(1) (where R, Rand Rare each independently hydrogen, a nonaromatic hydrocarbon group, a halogeno group or a halogenated nonaromatic hydrocarbon group; however, the nonaromatic hydrocarbon group excludes a crosslinked nonaromatic hydrocarbon group, and the halogenated nonaromatic hydrocarbon group excludes a crosslinked halogenated nonaromatic hydrocarbon group) Co(CO)RRGe&#x2014;Co(CO)(2) (where Rand Rare each independently hydrogen, a nonaromatic hydrocarbon group, a halogeno group or a halogenated nonaromatic hydrocarbon group; however, the nonaromatic hydrocarbon group excludes a crosslinked nonaromatic hydrocarbon group, and the halogenated nonaromatic hydrocarbon group excludes a crosslinked halogenated nonaromatic hydrocarbon group).

Ge-containing Co-film forming material, Ge-containing Co film and film forming method thereof

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Yokosuka, Japan

Raphael Rochat