Saint-gobain Glass France

Raphael Lante

Martin Melcher

Arnaud Huignard

Claire Thoumazet

A process for manufacturing a hydrophobic glazing by: (i) forming a carbon-rich SiOClayer at a surface of a mineral glass substrate via CVD by contacting the surface with a stream containing CH, SiH, and COwith an CH/SiHratio of less than or equal to 3.3 by volume, at a temperature of between 600&#xb0; C. and 680&#xb0; C.; (ii) forming a SiOlayer or a carbon-poor silicon oxycarbide layer with a mean C/Si ratio of less than 0.2 on the carbon-rich SiOClayer, thereby obtaining a layered substrate; (iii) annealing and/or shaping the layered substrate at a temperature of between 580&#xb0; C. and 700&#xb0; C.; (iv) activating the SiOlayer or the carbon-poor silicon oxycarbide layer by plasma treatment or acidic or basic chemical treatment; and (v) grafting, by covalent bonding, a fluorinated hydrophobic agent to the surface of the SiOlayer or the carbon-poor silicon oxycarbide layer.

Process for manufacturing a hydrophobic glazing containing a carbon rich silicon oxycarbide tie layer

The invention relates to a glazing comprising a transparent glass substrate containing ions of at least one alkali metal and a transparent layer made of silicon oxycarbide (SiOC) having a total thickness E with (a) a carbon-rich deep zone, extending from a depth Pto a depth P, where the C/Si atomic ratio is greater than or equal to 0.5, and (b) a carbon-poor surface zone, extending from a depth Pto a depth P, where the C/Si atomic ratio is less than or equal to 0.4, with P&#x3c;P&#x3c;P&#x3c;Pand (P&#x2212;P)+(P&#x2212;P)&#x3c;E the distance between Pand Prepresenting from 10% to 70% of the total thickness E of the silicon oxycarbide layer and the distance between Pand Prepresenting from 10% to 70% of the total thickness E of the silicon oxycarbide layer.

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Herzogenrath, Germany

Raphael Lante