Lam Research Corporation

Raphael Casaes

Hong Shih

Duane Outka

Alex Paterson

Harmeet Singh

Qian Fu

Jon McChesney

Tuochuan Huang

Darrell Ehrlich

Sanket Sant

Robert G O'Neill

Haoquan Yan

Kevin Leung

Grayson Ford

Zhumin Han

Anthony Contreras

Vahid Vahedi

Mohammad Kamarehi

Shang-I Chou

Alejandro C Sanchez

Aravind Alwan

Seetharaman Ramachandran

Joanna Wu

A first edge ring for a substrate support is provided. The first edge ring includes an annular-shaped body and one or more lift pin receiving elements. The annular-shaped body is sized and shaped to surround an upper portion of the substrate support. The annular-shaped body defines an upper surface, a lower surface, a radially inner surface, and a radially outer surface. The one or more lift pin receiving elements are disposed along the lower surface of the annular-shaped body and sized and shaped to receive and provide kinematic coupling with top ends respectively of three or more lift pins.

Edge rings providing kinematic coupling and corresponding substrate processing systems

An edge ring arrangement for a processing chamber includes a first ring configured to surround and overlap a radially outer edge of an upper plate of a pedestal arranged in the processing chamber, a second ring arranged below the first moveable ring, wherein a portion of the first ring overlaps the second ring, a first actuator configured to actuate a first pillar to selectively move the first ring to a raised position and a lowered position relative to the pedestal, and a second actuator configured to actuate a second pillar to selectively move the second ring to a raised position and a lowered position relative to the pedestal.

Edge ring arrangement with moveable edge rings

Replaceable and/or collapsible edge ring assemblies for plasma sheath tuning incorporating edge ring positioning and centering features

A substrate processing system includes a processing chamber and a pedestal arranged in the processing chamber. An edge coupling ring is arranged adjacent to a radially outer edge of the pedestal. A first actuator is configured to selectively move the edge coupling ring to a raised position, relative to the pedestal to provide clearance between the edge coupling ring and the pedestal to allow a robot arm to remove the edge coupling ring from the processing chamber.

Moveable edge coupling ring for edge process control during semiconductor wafer processing

A method for controlling thermal cycling of a faraday shield in a plasma process chamber is provided. The method includes: performing a first plasma processing operation on a first wafer in the plasma process chamber; terminating the first plasma processing operation; performing a first wafer transfer operation to transfer the first wafer out of the chamber; and, during the first wafer transfer operation, applying power to a TCP coil under a plasma limiting condition.

Controlling temperature of a faraday shield

A wafer is provided into an entrance load lock chamber. A vacuum is created in the entrance load lock chamber. The wafer is transported to a processing tool. The wafer is processed in a process chamber to provide a processed wafer, wherein the processing forms halogen residue. A degas step is provided in the process chamber after processing the wafer. The processed wafer is transferred into a degas chamber. The processed wafer is treated in the degas chamber with UV light and a flow of gas comprising at least one of ozone, oxygen, or HO. The flow of gas is stopped. The UV light is stopped. The processed wafer is removed from the degas chamber.

Method and apparatus of halogen removal

A method of extending storage time prior to cleaning a component of a plasma chamber is provided. The method comprises removing the component from the chamber, covering a thermal spray coating on the component while the surface is exposed to atmospheric air, storing the component, optionally removing the covering, and optionally wet cleaning reaction by-products from the thermal spray coating. Alternatively, instead of, or in addition to covering a thermal spray coating on the component, the component can be placed into a desiccator or dry-box.

Extending storage time of removed plasma chamber components prior to cleaning thereof

A method of cleaning a microwave plasma applicator tube as described herein includes preparing a microwave plasma applicator for cleaning. A general cleaning of the plasma applicator tube is performed using an organic solvent wash and an ultrapure water wash. Selective cleanings of the tube are performed to remove selected contaminants. Such cleanings include a third wash with an alkaline cleaning solution, a fourth wash with an acidic cleaning solution and another wash using an ammonia and peroxide solution. The tube is rinsed using a sonicating wash performed in ultrapure water followed by drying. Also, the coil can be cleaned using acidic wash solution.

Method for cleaning microwave applicator tube

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Alameda, CA, United States of America

Raphael Casaes