Northern Telecom Limited

Kabushiki Kaisha Toshiba

Ranjit S Mand

Masaru Nakamura

In the monolithic integration of HFET and DOES device, a wide band gap carrier confining semiconductor layer is provided only at predetermined locations where DOES devices are desired. This layer is not provided at other predetermined locations where HFET devices are desired as it would constitute a shunt path which would degrade the high frequency operation of the HFET devices. The invention is particularly useful where monolithic integration of optical sources, optical detectors, and electronic amplifying or switching elements is desired.

Monolithic integration of optoelectronic and electronic devices

In the monolithic integration of HFET and DOES devices, a wide band gap carrier confining semiconductor layer is provided only at predetermined locations where DOES devices are desired. This layer is not provided at other predetermined locations where HFET devices are desired as it would constitute a shunt path which would degrade the high frequency operation of the HFET devices. The invention is particularly useful where monolithic integration of optical sources, optical detectors, and electronic amplifying or switching elements is desired.

An optoelectronic bistable apparatus having a double heterojunction structure comprising a light-emitting first semiconductor layer of n type GaAs interlaid between a second semiconductor layer of n.sup.- type AlGaAs and a third semiconductor layer of p.sup.+ type AlGaAs, the second and third semiconductor layers having a broader energy gap than that of the first semiconductor layer. An extremely thin fourth semiconductor layer of p.sup.+ type GaAs with a high impurity concentration is deposited on the second semiconductor layer. A fifth semiconductor layer of n.sup.- type AlGaAs, n.sup.+ type AlGaAs and n.sup.+ type GaAs is formed on the fourth semiconductor layer. At least a portion of the fifth semiconductor layer which contacts the fourth semiconductor layer has a broader energy gap than that of the second semiconductor layer.

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Nepean, Canada

Ranjit S Mand