Bandwidth9, Inc.

Oplink Communications, Inc.

Conductus, Inc.

Rang-Chen Yu

Wupen Yuen

Peter Kner

Philip Worland

Gabriel S Li

Constance J Chang-Hasnain

Zuon-Min Chuang

Sung-Ping Huang

Renato Dato

Domenico Di Mola

Stephen Robert Whiteley

D Philip Worland

Barry Hugh Whalen

Domenico DiMola

Gabriel Ll

Marc Schwager

Methods, systems, and apparatus, for an external cavity FP laser. In one aspect, an apparatus is provided that includes a FP laser diode; a Faraday rotator (FR) coupled to receive an optical output of the FP laser diode and that rotates a polarization of the optical output; an optical fiber coupled at a first end to receive the output of the FR; a WDM filter coupled to a second end of the optical fiber to receive the optical signal from the optical fiber; and a FRM coupled directly or indirectly to an output of the WDM filter, wherein an optical output of the WDM filter is partially reflected by the FRM such that the polarization of a reflected beam is rotated, and wherein the reflected optical signal then passes through the FR with its polarization being rotated by the FR before it is injected back into the FP laser diode.

External cavity FP laser

External cavity fabry-perot laser

A tunable semiconductor laser system includes a laser with a semiconductor active region positioned between upper and lower confining regions of opposite type semiconductor material. First and second reflective members are positioned at opposing edges of the active and confining regions. A wavelength tuning member and a temperature sensor are coupled to the laser. A control loop is coupled to the temperature sensor and the tuning member. In response to a detected change in temperature the control loop sends an adjustment signal to the tuning member and the tuning member adjusts a voltage or current supplied to the laser to provide a controlled output beam of selected wavelength.

Tunable semiconductor laser system

A tunable semiconductor laser assembly includes a laser with a seal surface, a semiconductor active region positioned between upper and lower confining regions of opposite type semiconductor material and first and second reflective members positioned at opposing edges of the active and confining regions. A seal cap includes a seal ring. The seal cap seal ring is coupled to the seal surface and forms a hermetic seal. A wavelength tuning member and a temperature sensor is coupled to the laser. A temperature sensor coupled to the laser. A control loop is coupled to the temperature sensor and the tuning member. In response to a detected change in temperature the control loop sends an adjustment signal to the tuning member, and the tuning member adjusts a voltage or current supplied to the laser to provide a controlled frequency and power of an output beam.

A multiplexer for a wavelength division multiplexed optical communication system includes an optical circulator with at least first, second, third and fourth circulator ports. An optical fiber with a first optical transmission path is coupled to the first circulator port and carries a wavelength division multiplexed optical signal that includes signals,. A second optical transmission path is in optical communication with the second circulator port. A first laser is coupled to the second optical transmission path. The first laser reflects the,signals and adds a signal,. A control loop is coupled to the first laser. In response to a detected change in temperature the control loop sends a signal to adjust a voltage or current supplied to the first laser and provide a controlled frequency and power of an output beam. A third optical transmission path is in optical communication with the third circulator port and transmits the signals,and the signals,that are received from the optical circulator. A fourth optical transmission path is in optical communication with the fourth optical circulator port. The fourth optical transmission path is positioned after the second optical transmission path and before the third optical transmission path. A first optoelectronic device is coupled to the fourth optical transmission path.

A wafer assembly that includes a wafer substrate. A plurality of micro-optomechanical or micro-optoelectrical devices are positioned on a surface of the wafer substrate. Each micro-optomechanical or micro-optoelectrical device has a seal surface. A plurality of seal caps are coupled to the micro-optomechanical or micro-optoelectrical devices. Each seal cap has a seal ring. The seal cap seal ring is coupled to a seal surface of the micro-optomechanical or micro-optoelectrical device to form a hermetic seal.

Hermetically sealed semiconductor laser device

A monitoring and control assembly for an optical system includes a tunable laser. The laser generates a divergent output beam along an optical axis. A first photodetector is provided. A wavelength selective filter is tilted at an angle relative to the optical axis that provides an angular dependence of a wavelength reflection of the wavelength selective filter and directs the reflected output beam towards the first photodetector.

Monitoring and control assembly for wavelength stabilized optical system

A multiplexer has an optical circulator including at least first, second and third circulator ports. An optical fiber with a first optical transmission path is coupled to the first circulator port of the optical circulator. The optical fiber carries a wavelength division multiplexed optical signal, including signals &lgr;,-&lgr;,, and at least one signal &lgr;,to be dropped by the multiplexer. A second optical transmission path is in optical communication with the second circulator port. A first filter is coupled to the second optical transmission path. The first filter passes a portion of the &lgr;,signal, and reflects a first residual &lgr;,signal and signals &lgr;,-&lgr;,to the optical circulator. A third optical transmission path is in optical communication with the third circulator port and transmits the signals &lgr;,-&lgr;,received from the optical circulator.

Flexible optical multiplexer

An apparatus and method for obtaining ultra-high speed operation of a semiconductor laser diode is presented. The invention utilizes any of a variety of conventional laser diodes in combination with cooling means for operation of the laser at temperatures below 120 K. Input electrical signals may include signals on a 28 GHz signal carrier and pulsed signals. An extended fiber optics cable may be used to operate the system as an optical delay line.

Growing community of inventors

San Jose, CA, United States of America

Rang-Chen Yu