Applied Materials, Inc.

Raney Williams

Thorsten B Lill

Jeffrey D Chinn

Padmapani Nallan

Arthur Y Chen

Jitske Trevor

Waiching Chow

Tamas Varga

Herve Mace

A process for etching multiple layers on a substratein an etching chamberand cleaning a multilayer etchant residue formed on the surfaces of the wallsand components of the etching chamber. In multiple etching steps, process gas comprising different compositions of etchant gas is used to etch layers on the substratethereby depositing a compositionally variant etchant residue inside the chamber. In one cleaning step, a first cleaning gas is added to the process gas to clean a first residue or to suppress deposition of the first residue onto the chamber surfaces. In a second cleaning step, another residue composition is cleaned off the chamber surfaces using a second cleaning gas composition.

Multiple stage process for cleaning process chambers

A process of reducing critical dimension (CD) microloading in dense and isolated regions of etched features of silicon-containing material on a substrate uses a plasma of an etchant gas and an additive gas. In one version, the etchant gas comprises halogen species absent fluorine, and the additive gas comprises fluorine species and carbon species, or hydrogen species and carbon species.

Sidewall polymer forming gas additives for etching processes

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Portland, OR, United States of America

Raney Williams