Lsi Logic Corporation

Randy M Yim

Christopher L Neville

A test reticle and alignment mark optimization method is provided for determining the optimal alignment mark size for the efficient and accurate alignment of process layers during integrated circuit manufacture. The test reticle includes a number of orthogonally arranged alignment marks of various types and sizes and one or more registration structures. The method involves the steps of determining an initial expected range of alignment mark sizes on the test reticle which are suitable for a particular application; applying the test reticle patter to test wafers; further processing the test wafers; measuring the alignment signals produced by scanning the alignment marks in the initial expected range; quantifying the alignment signal quality; and fitting the quantified alignment signal quality to a statistical model to determine a range of optimal alignment signal dimensions.

Method of using a test reticle to optimize alignment of integrated

The subject invention is directed to a method for producing semiconductor wafers using a simplified hole interconnect process. These wafers include at least one interconnect layer located on a contact or via layer. As contrasted with the semiconductor wafers produced according to the prior art method described above, the contact or via layer of this invention includes a plurality of patterned openings formed therein which are in substantial alignment without offset with each other.

Simplified hole interconnect process

Integrated circuit test reticle and alignment mark optimization method

A test reticle and alignment mark optimization method is provided for determining the optimal alignment mark size for the efficient and accurate alignment of process layers during integrated circuit manufacture. The test reticle includes a number of orthogonally arranged alignment marks of various types and sizes and one or more registration structures. The method involves the steps of determining an initial expected range of alignment mark sizes on the test reticle which are suitable for a particular application; applying the test reticle pattern to test wafers; further processing the test wafers; measuring the alignment signals produced by scanning the alignment marks in the initial expected range; quantifying the alignment signal quality; and fitting the quantified alignment signal quality to a statistical model to determine a range of optimal alignment signal dimensions.

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Pleasanton, CA, United States of America

Randy M Yim