International Business Machines Corporation

Globalfoundries Inc.

Smartsens Technology (cayman) Co., Limited

Randy Lee Wolf

Mark David Jaffe

Anthony K Stamper

James Albert Slinkman

Alan Bernard Botula

James William Adkisson

Thomas J Dunbar

Panglijen Candra

Alvin Jose Joseph

Jeffrey P Gambino

Theodore Gerard Van Kessel

Max L Lifson

Richard A Phelps

John J Ellis-Monaghan

Max Gerald Levy

Mukta G Farooq

Zhong-Xiang He

Hanyi Ding

John Anthony Fitzsimmons

Xuefeng Liu

Joseph R Greco

Brett T Cucci

Jennifer C Robbins

Kevin Munger

William Savaria

Alvin Wayne Strong

Frederick Gustav Anderson

Lawrence F Wagner, Jr

Venkata Narayana Rao Vanukuru

Jiansheng Xu

Michael Lawrence Gautsch

Donald J Cook

Shyam Parthasarathy

Jean-Marc Petillat

Philippe Ramos

An approach for heat dissipation in integrated circuit devices is provided. A method includes forming an isolation layer on an electrically conductive feature of an integrated circuit device. The method also includes forming an electrically conductive layer on the isolation layer. The method additionally includes forming a plurality of nanowire structures on a surface of the electrically conductive layer.

Integrated circuit heat dissipation using nanostructures

A design structure for an integrated radio frequency (RF) filter on a backside of a semiconductor substrate includes: a device on a first side of a substrate; a radio frequency (RF) filter on a backside of the substrate; and at least one substrate conductor extending from the front side of the substrate to the backside of the substrate and electrically coupling the RF filter to the device.

Backside integration of RF filters for RF front end modules and design structure

Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed to be in contact with at least one piezoelectric substrate. The method further includes forming a micro-electro-mechanical structure (MEMS) comprising a MEMS beam in which, upon actuation, the MEMS beam will turn on the at least one piezoelectric filter structure by interleaving electrodes in contact with the piezoelectric substrate or sandwiching the at least one piezoelectric substrate between the electrodes.

Switchable filters and design structures

A semiconductor device may include a transistor gate in a device layer; an interconnect layer over the device layer; and an air gap extending through the interconnect layer to contact an upper surface of the transistor gate. The air gap provides a mechanism to reduce both on-resistance and off-capacitance for applications using SOI substrates such as radio frequency switches.

Air gap over transistor gate and related method

Assemblies including a device layer of a silicon-on-insulator (SOI) substrate and a replacement substrate replacing a handle wafer of the SOI substrate, and methods for transferring the device layer of the SOI substrate from the handle wafer to the replacement substrate. A device structure is formed in a first section of the handle wafer, and a second section of the handle wafer adjoining the first section of the handle wafer is removed to expose a surface of the buried dielectric layer of the silicon-on-insulator substrate. A permanent substrate is attached to the surface of the buried dielectric layer. When the permanent substrate is attached to the surface of the buried dielectric layer, the section of the handle wafer is received inside a cavity defined in the permanent substrate.

Device layer transfer with a preserved handle wafer section

Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed on a piezoelectric substrate. The method further includes forming a micro-electro-mechanical structure (MEMS) comprising a MEMS beam formed above the piezoelectric substrate and at a location in which, upon actuation, the MEMS beam shorts the piezoelectric filter structure by contacting at least one of the plurality of electrodes.

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Essex Junction, VT, United States of America

Randy Lee Wolf