Intel Ndtm US LLC

Randy Koval

Krishna Kumar Parat

Fei Wang

Jie Li

Meng-Wei Kuo

Vijay Saradhi Mangu

Dipanjan Basu

David Meyaard

Henok Mebrahtu

Minsheng Wang

Xingui Zhang

Guanjie Li

Qun Gao

Systems, apparatuses and methods may provide for memory cell technology comprising a control gate, a conductive channel, and a charge storage structure coupled to the control gate and the conductive channel, wherein the charge storage structure includes a polysilicon layer and a metal layer. In one example, the metal layer includes titanium nitride or other high effective work function metal.

Metal hybrid charge storage structure for memory

An embodiment of a memory device may comprise a vertical channel, a first memory cell formed on the vertical channel, a first wordline coupled to the first memory cell, a second memory cell formed on the vertical channel immediately above the first memory cell, a second wordline coupled to the second memory cell, and an airgap disposed between the first wordline and the second wordline. Other embodiments are disclosed and claimed.

3D NAND with inter-wordline airgap

Growing community of inventors

Albuquerque, NM, United States of America

Randy Koval