Sandia Corporation

National Technology & Engineering Solutions of Sandia, LLC

Xerox Corporation

Varioscale, Inc.

Randy J Shul

Paul Charles Galambos

George E Vernon

Darren A Hoke

Karl Douglas Greth

Michael David Henry

Jeffry Joseph Sniegowski

Ronald P Manginell

Douglas Ray Adkins

Robert K Grubbs

David R Koehler

David P Adams

W Kent Schubert

Edwin J Heller

Ronald S Goeke

Jeffrey Stevens

V Carter Hodges

Louis S Weichman

Michael H Beggans

Gregory Paul Salazar

Kira L Fishgrab

Christi Gober Willison

George J Roller

Roy H Olsson

Todd Richard Christenson

Arthur M Gooray

Joseph Michael Crowley

Michael Baker

Stanley H Kravitz

David Ingersoll

William A Zortman

Thomas E Zipperian

Christopher Nordquist

Carol I Ashby

Kevin R Zavadil

Albert G Baca

Peggy J Clews

Frank J Peter

Marc A Polosky

Richard C Givler

Thomas A Plut

Christopher Constantine

Peter Esherick

John C Zolper

Rajen Chanchani

Kurt W Larson

Maarten P De Boer

John E Parmeter

Dennis J Rieger

Christi Willison Gober

Robb M Lee

Scott Silverman

Caitlin Rochford Friedman

Michael J Rye

John Mudrick

Craig Y Nakakura

Mary-Anne Mitchell

Tracy C Peterson

Catalina Ahlers

Gary A Patrizi

Steven Norris Ball

Brian Scott Phillips

The present invention relates to methods of delayering a semiconductor integrated circuit die or wafer. In at least one aspect, the method includes exposing a die or wafer to plasma of an etching gas and detecting exposure of one or more metal layers within the die. In one aspect of the invention, the plasma of the etching gas is non-selective and removes all materials in a layer at about the same rate. In another aspect of the invention, two different plasmas of corresponding etching gases are employed with each plasma of the etching gas being selective, thus necessitating the sequential use of both plasmas of corresponding etching gases to remove all materials in a layer.

Plasma-based method for delayering of circuits

Various technologies for providing an operator of a focused ion beam (FIB) system with navigational and processing data are described herein. An exemplary system includes a broadband light source and a narrowband light source that emit light to a target of the FIB. An optical detector receives reflections of the broadband light from the target and outputs data that is used to generate two-dimensional images of the target in a region near a location of incidence of the FIB at the target. An interferometer receives reflections of the narrowband light from the target and outputs data indicative of an interference pattern of the narrowband reflections. A computing device computes a thickness of one or more material layers that make up the target based upon the interference pattern. A two-dimensional image of the target and an indication of the computed thickness are then displayed to the operator of the FIB.

Systems and methods for interferometric end point detection for a focused ion beam fabrication tool

The present invention relates to a lateral via to provide an electrical connection to a buried conductor. In one instance, the buried conductor is a through via that extends along a first dimension, and the lateral via extends along a second dimension that is generally orthogonal to the first dimension. In another instance, the second dimension is oblique to the first dimension. Components having such lateral vias, as well as methods for creating such lateral vias are described herein.

Lateral vias for connections to buried microconductors and methods thereof

Various technologies for simultaneously making a plurality of modifications to a previously manufactured semiconductor are described herein. A mask layer is applied to a surface of the previously manufactured semiconductor device. A pattern is formed in the mask layer, where the pattern is aligned with a plurality of features of the semiconductor device that are desirably modified. Layers of the semiconductor device are etched based on the pattern to create a plurality of vias that each extend through one or more layers of the semiconductor device to a respective feature of the device. A conducting material is deposited into the vias to form a plurality of conducting plugs. Conducting material may be further deposited on the surface of the semiconductor device to connect plugs to one another and/or connect plugs to surface features of the device, thereby forming a plurality of new connections between features of the semiconductor device.

Method for simultaneous modification of multiple semiconductor device features

Lateral vias for connections to buried microconductors

In wafer-level packaging of microelectromechanical (MEMS) devices a lid wafer is bonded to a MEMS wafer in a predetermined aligned relationship. Portions of the lid wafer are removed to separate the lid wafer into lid portions that respectively correspond in alignment with MEMS devices on the MEMS wafer, and to expose areas of the MEMS wafer that respectively contain sets of bond pads respectively coupled to the MEMS devices.

MEMS packaging with etching and thinning of lid wafer to form lids and expose device wafer bond pads

A method is disclosed for singulating die from a substrate having a sacrificial layer and one or more device layers, with a retainer being formed in the device layer(s) and anchored to the substrate. Deep Reactive Ion Etching (DRIE) etching of a trench through the substrate from the bottom side defines a shape for each die. A handle wafer is then attached to the bottom side of the substrate, and the sacrificial layer is etched to singulate the die and to form a frame from the retainer and the substrate. The frame and handle wafer, which retain the singulated die in place, can be attached together with a clamp or a clip and to form a package for the singulated die. One or more stops can be formed from the device layer(s) to limit a sliding motion of the singulated die.

Die singulation method and package formed thereby

A two-stage acceleration sensing apparatus is disclosed which has applications for use in a fuze assembly for a projected munition. The apparatus, which can be formed by bulk micromachining or LIGA, can sense acceleration components along two orthogonal directions to enable movement of a shuttle from an 'as-fabricated' position to a final position and locking of the shuttle in the final position. With the shuttle moved to the final position, the apparatus can perform one or more functions including completing an explosive train or an electrical switch closure, or allowing a light beam to be transmitted through the device.

Microelectromechanical safing and arming apparatus

An acceleration-sensing apparatus is disclosed which includes a moveable shuttle (i.e. a suspended mass) and a latch for capturing and holding the shuttle when an acceleration event is sensed above a predetermined threshold level. The acceleration-sensing apparatus provides a switch closure upon sensing the acceleration event and remains latched in place thereafter. Examples of the acceleration-sensing apparatus are provided which are responsive to an acceleration component in a single direction (i.e. a single-sided device) or to two oppositely-directed acceleration components (i.e. a dual-sided device). A two-stage acceleration-sensing apparatus is also disclosed which can sense two acceleration events separated in time. The acceleration-sensing apparatus of the present invention has applications, for example, in an automotive airbag deployment system.

Microelectromechanical acceleration-sensing apparatus

New methods for fabrication of silicon microstructures have been developed. In these methods, an etching delay layer is deposited and patterned so as to provide differential control on the depth of features being etched into a substrate material. Compensation for etching-related structural artifacts can be accomplished by proper use of such an etching delay layer.

Method to control artifacts of microstructural fabrication

New methods for fabrication of silicon microstructures have been developed. In these methods, an etching delay layer is deposited and patterned so as to provide differential control on the depth of features being etched into a substrate material. Structures having features with different depth can be formed thereby in a single etching step.

Method to fabricate multi-level silicon-based microstructures via use of an etching delay layer

A method for sensing a chemical analyte in a fluid stream comprises providing a microfabricated teeter-totter resonator that relies upon a Lorentz force to cause oscillation in a paddle, applying a static magnetic field substantially aligned in-plane with the paddle, energizing a current conductor line on a surface of the paddle with an alternating electrical current to generate the Lorentz force, exposing the resonator to the analyte, and detecting the response of the oscillatory motion of the paddle to the chemical analyte. Preferably, a chemically sensitive coating is disposed on at least one surface of the paddle to enhance the sorption of the analyte by the paddle. The concentration of the analyte in a fluid stream can be determined by measuring the change in the resonant frequency or phase of the teeter-totter resonator as the chemical analyte is added to or removed from the paddle.

Method for chemical sensing using a microfabricated teeter-totter resonator

A microfabricated teeter-totter resonator comprises a frame, a paddle pivotably anchored to the frame by pivot arms that define an axis of rotation, a current conductor line on a surface of the paddle, means for applying a static magnetic field substantially perpendicular to the rotational axis and in the plane of the paddle, and means for energizing the current conductor line with an alternating current. A Lorentz force is generated by the interaction of the magnetic field with the current flowing in the conductor line, causing the paddle to oscillate about the axis of rotation. The teeter-totter resonator can be fabricated with micromachining techniques with materials used in the integrated circuits manufacturing industry. The microfabricated teeter-totter resonator has many varied applications, both as an actuation device and as a sensor. When used as a chemical sensor, a chemically sensitive coating can be disposed on one or both surfaces of the paddle to enhance the absorption of chemical analytes from a fluid stream. The resulting mass change can be detected as a change in the resonant frequency or phase of the oscillatory motion of the paddle.

Microfabricated teeter-totter resonator

A new class of semipermeable membranes, and techniques for their fabrication, have been developed. These membranes, formed by appropriate etching of a deposited silicon nitride layer, are robust, easily manufacturable, and compatible with a wide range of silicon micromachining techniques.

Process for manufacture of semipermeable silicon nitride membranes

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Albuquerque, NM, United States of America

Randy J Shul