Siliconware Precision Industries Co., Ltd.

Randy Hy Lo

Chi-Chuan Wu

Feng-Lung Chien

Chun-chi Ke

A method is proposed for fabricating a TFBGA (Thin & Fine Ball-Grid Array) package with embedded heat spreader. Conventionally, since an individual TFBGA package is quite small in size, it would be highly difficult to incorporate an embedded heat spreader therein. As a solution to this problem, the proposed method utilizes a single substrate predefined with a plurality of package sites, and further utilizes a heat-spreader frame including an integrally-formed matrix of heat spreaders each corresponding to one of the package sites on the substrate. A batch of semiconductor chips are then mounted on the respective package sites on the substrate. During the encapsulation process, a single continuous encapsulation body is formed to encapsulate the entire heat-spreader frame and all the semi-conductor chips. After ball implantation, a singulation process is performed to cut apart the encapsulation body into individual package units, each serving as the intended TFBGA package. In the foregoing process, since the entirety of the heat-spreader frame is relatively large in size as compared to the size of an individual TFBGA package, it can be easily handled, so that the embedding of a heat spreader in each package unit can be easily carried out.

Method of fabricating a thin and fine ball-grid array package with embedded heat spreader

A method is proposed for forming circuit probing (CP) contact points on fine pitch peripheral bond pads (PBP) on a flip chip for the purpose of facilitating peripheral circuit probing of the internal circuitry of the flip chip. The proposed method is characterized in the forming of a dual-layer NiV/Cu metallization structure, rather than a triple-layer Al/NiV/Cu metallization structure, over each aluminum-based PBP, which includes a bottom layer of nickel-vanadium (NiV) deposited over the aluminum-based PBP and an upper layer of copper (Cu) deposited over the nickel-vanadium layer. When low-resolution photolithographic and etching equipment is used for photoresist mask definition for selective removal of the NiV/Cu metallization structure, the resulted photoresist masking can be misaligned to the PBP. However, since no aluminum layer is included in the metallization structure, a Cu/NiV specific etchant would only etch away the copper layer and the nickel-vanadium layer but not the aluminum-based PBP, thus leaving the unmasked portion of the aluminum-based PBP intact.

Growing community of inventors

Taipei, Taiwan

Randy Hy Lo