Hewlett-packard Development Company, L.p.

Oregon State University

Other

Randy Hoffman

Peter Mardilovich

Gregory Scott Herman

John F Wager, Iii

David Punsalan

Hai Q Chiang

Laura Kramer

David Hong

Michael W Cumbie

David A Champion

Kurt M Ulmer

Douglas A Keszler

James Elmer Abbott, Jr

Michael A Pate

Chien-Hua Chen

Andrew L Van Brocklin

Pavel Kornilovich

James William Stasiak

Devin Alexander Mourey

Jeremy T Anderson

Vincent C Korthuis

Diane R Hammerstad

Michael John Regan

Marshall Field

Tsuyoshi Yamashita

David J Benson

Neel Banerjee

Brad Benson

Nicole L Dehuff

J Daniel Smith

Pavel Komilovich

Susan Nakashima

Amy Gault

David Blessing

Chien Hua Chen

Peter Mardllovich

Rick Presley

Chris Knutson

David Oregon State University Off Of Techn Transfer Hong

Hai Q Oregon State Universitys Off Of Techn Transfer Chiang

John Wager

An example fluidic device may comprise a fluidic die and a support element coupled to the fluidic die. A fluid channel may be arranged within the support element and may define a fluid path through the support element and a fluid aperture of the fluidic die. A conductive element may be arranged in the fluid path and be coupled to a ground of the fluidic die. A material and size of the conductive element may be selected to engender galvanic effect at an approximately zero potential.

Conductive elements electrically coupled to fluidic dies

Examples include a fluidic device comprising a fluidic die, a support element, and a conductive member. The support element is coupled to the fluidic die, and the support element has a fluid channel formed therein. The fluid channel exposes at least a portion of a back surface of the fluidic die. The support element further includes a member opening passing therethrough. The conductive member is connected to the fluidic die, and the conductive member is a least partially disposed in the member opening such that a portion of the conductive member is exposed to the fluid channel of the support element.

Fluidic dies with conductive members

A printed circuit board includes a recessed pocket. A fluid droplet ejection die is within recessed pocket.

Printed circuit board with recessed pocket for fluid droplet ejection die

Systems, devices, and methods for configurable sensor arrays are provided. An example of a configurable sensor array includes a plurality of sensors in a matrix array formed on a single backplane and a plurality of elements within one of the plurality of sensors, where the plurality of elements provides alternative electrical paths enabling the one of the plurality of sensors to have a range of output impedances.

Configurable sensor arrays

An example provides an apparatus including a substrate, a metal layer, and an adhesive layer adhered between the substrate and the metal layer, the adhesive layer comprising indium oxide, tin oxide, gallium oxide, indium-tin oxide, indium-gallium oxide, tin-gallium oxide, or indium-tin-gallium oxide.

Film stack including adhesive layer

An example provides an apparatus including a substrate, a metal layer, and an adhesive layer adhered between the substrate and the metal layer, the adhesive layer comprising zinc-gallium oxide, zinc-indium oxide, zinc-gallium-tin oxide, or zinc-indium-tin oxide.

A semiconductor film composition includes an oxide semiconductor material. At least one polyatomic ion is incorporated into the oxide semiconductor material.

Semiconductor film composition

A battery temperature sensor may include a substrate and a thin film resistive temperature device (RTD). The substrate can be layered on a battery cell element. The battery cell element can be an anode, a cathode, and a separator between the anode and cathode used in a battery cell. The thin film resistive temperature device (RTD) on the flexible substrate can change resistance with a change in temperature. A battery cell housing can enclose the thin film RTD.

Battery temperature sensor

In one method of forming a semiconductor device, a first electrode is formed electrically coupled with a semiconductor material. After the first electrode is formed, an insulator is formed over the semiconductor material adjoining the first electrode and extending a selected distance from the first electrode. After the insulator is formed, a second electrode is formed electrically coupled with the semiconductor material adjoining the insulator.

Semiconductor devices and methods of making

In at least some embodiments, a thin-film transistor (TFT) includes a gate electrode and a gate dielectric covering the gate dielectric. The TFT also includes a source electrode and a drain electrode adjacent the gate dielectric. The TFT also includes a bi-layer channel between the source electrode and the drain electrode, the bi-layer channel having a zinc indium oxide (ZIO) layer positioned adjacent the gate dielectric and a zinc tin oxide (ZTO) layer that covers the ZIO layer.

Thin-film transistor (TFT) with a bi-layer channel

A thin-film transistor includes a gate electrode, a gate dielectric disposed on the gate electrode, a channel layer, and a passivation layer. The channel layer has a first surface and an opposed second surface, where the first surface is disposed over at least a portion of the gate dielectric. The channel layer also has a first oxide composition including at least one predetermined cation. The passivation layer is disposed adjacent to at least a portion of the opposed second surface of the channel layer. The passivation layer has a second oxide composition including the at least one predetermined cation of the first oxide composition and at least one additional cation that increases a bandgap of the passivation layer relative to the channel layer.

Thin film transistors

A semiconductor device includes a metal oxide channel and methods for forming the same. The metal oxide channel includes indium, gallium, and zinc.

Method of making a semiconductor device having a multicomponent oxide

Embodiments of methods, apparatuses, devices, and/or systems for forming a solution processed device are described.

Multilayer device with organic and inorganic dielectric material

One exemplary embodiment includes a semiconductor device. The semiconductor device can include a channel including one or more compounds of the formula ABOwherein each A is selected from the group of Ga, In, each B is selected from the group of Ge, Sn, Pb, each O is atomic oxygen, each x is independently a non-zero integer, and each of A and B are different.

Semiconductor device with multiple component oxide channel

Semiconductor device having a metal oxide channel

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Corvallis, OR, United States of America

Randy Hoffman