Applied Materials, Inc.

Randy D Schmieding

Keith A Miller

Ilya Lavitsky

Vijay D Parkhe

John C Forster

Xianmin Tang

Kirankumar Neelasandra Savandaiah

Tza-Jing Gung

Mingwei Zhu

Yong Cao

Daniel Lee Diehl

Jothilingam Ramalingam

Shane Lavan

Sumit Subhash Patankar

Hiroyuki Takahama

Fred Eric Ruhland

Thomas B Brezoczky

Prashanth Kothnur

Thanh X Nguyen

Gene Y Kohara

Embodiments of a substrate carrier are provided herein. In some embodiments, a substrate carrier includes a base plate, wherein the base plate is a thin, solid plate with no through holes or embedded components; and a plurality of raised portions extending from the base plate, wherein the plurality of raised portions include first raised portions and second raised portions, the first raised portions disposed radially inward from the second raised portions, wherein the base plate and the plurality of raised portions define pockets configured to retain a plurality of substrates, and wherein an upper surface of the second raised portions have a greater surface area than an upper surface of the first raised portions.

Substrate carrier

A physical vapor deposition processing chamber is described. The processing chamber includes a target backing plate in a top portion of the processing chamber, a substrate support in a bottom portion of the processing chamber, a deposition ring positioned at an outer periphery of the substrate support and a shield. The substrate support has a support surface spaced a distance from the target backing plate to form a process cavity. The shield forms an outer bound of the process cavity. In-chamber cleaning methods are also described. In an embodiment, the method includes closing a bottom gas flow path of a processing chamber to a process cavity, flowing an inert gas from the bottom gas flow path, flowing a reactant into the process cavity through an opening in the shield, and evacuating the reaction gas from the process cavity.

Cleaning of SIN with CCP plasma or RPS clean

Cleaning of sin with CCP plasma or RPS clean

Apparatus for physical vapor deposition of dielectric material is provided herein. In some embodiments, a chamber lid of a physical vapor deposition chamber includes an inner magnetron assembly coupled to an inner target assembly, and an outer magnet assembly coupled to an outer target assembly, wherein the inner magnetron assembly and the inner target assembly are electrically isolated from the outer magnet assembly and the outer target assembly.

Apparatus for PVD dielectric deposition

A method and apparatus for shielding a device, such as a pump, from a process chamber of a semiconductor wafer processing system. The apparatus comprises a shield connected to a mounting portion. The mounting portion has a fluid passage wherein the temperature of the apparatus is regulated by flowing fluid through the passage.

Method and apparatus for shielding a device from a semiconductor wafer process chamber

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Saratoga, CA, United States of America

Randy D Schmieding