International Business Machines Corporation

Randolph Huff Schnitzel

Harsaran S Bhatia

Steve I Petvai

Homi G Sarkary

Harry Charles Calhoun

Helmut M Gartner

Robert Leonard Melhado

Metals such as platinum and palladium are preferentially removed in the presence of their metal silicides by ion milling in a noble gas atmosphere such as argon. The process can be used on semiconductor chips to remove excess platinum after platinum silicide has been formed in the contact holes.

Ion milling of thin metal films

A method is disclosed for forming Schottky barrier junctions having improved barrier height characteristics. The method involves the use of a layer of polysilicon deposited upon the Schottky metal prior to sintering. The polysilicon layer acts as a source from which silicon is diffused into the metal during the sintering operation. After sintering the junction is quenched or cooled at a rapid rate whereby outdiffusion of the silicon is prevented.

Method of forming Schottky barrier junctions having improved barrier

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Newburgh, NY, United States of America

Randolph Huff Schnitzel