Applied Materials, Inc.

Agilent Technologies, Inc.

Adelphi Technology, Inc.

Other

Randall Scott Urdahl

Pravin K Narwankar

Turgut Sahin

Melvin Arthur Piestrup

Charles Kevin Gary

Allan Xi Chen

Craig Mathew Brown

Glenn Emerson Jones, Jr

Yao Zong Guan

Wong-Cheng Shih

James Edward Cooley

Jay Theodore Cremer, Jr

David Lowndes Williams

Adam Nathaniel Amoroso

Asher Sinensky

Gregory Steven Lee

Patricia M Liu

Arthur Schleifer

August Jon Hidalgo

Ravi Rajagopalan

David Dutton

Shankarram Athreya

Viorica Lopez-Avila

Mouloud Bakli

Martin L Guth

Karen L Seward

Shankarrram A Athreya

Andrea M Mendoza

Ankineedu Velaga

Jr Jay Theodore Cremer

Jr Glenn Emerson Jones

A cancer treatment apparatus has a neutron source generating neutrons exiting through a surface of a moderator block and an elongated beam-shaping apparatus (BSA) having a length and a circular cross section of a diameter less than the length, the BSA joined at one end to and projecting orthogonally from the surface of the moderator block of the neutron source, the BSA having a conically shaped element at an end away from the moderator block, the conically shaped element declining in diameter in a direction away from the moderator block. Neutrons produced by the neutron source enter the BSA at the surface of the moderator block, travel the length of the BSA, and exit the BSA through an aperture at the end of the BSA away from the moderator block.

Neutron source with beam shaping apparatus for cancer treatment

A neutron generator has a neutron source generating an ion beam bombarding a Titanium target having a first diameter, the target embedded in a pre-moderator, emitting fast neutrons isotropically, a portion of the fast neutrons moderated in passing through the pre-moderator and exiting through a lowermost surface of the pre-moderator, and a plate of moderating material abutting the lowermost surface of the pre-moderator, the plate having an opening therethrough in a shape of a truncated cone with an axis aligning with direction of the ion beam, a depth, a major diameter of at the upper surface of the plate and a minor diameter at the lower surface of the plate, the opening forming a funnel through which neutrons pass. Neutrons enter the funnel and are to exit through the minor diameter of the funnel, providing a neutron beam with a spot size useful for neutron radiography.

Neutron source with beam shaping apparatus for radiography

A plasma generation device includes: a substrate having a first surface and a second surface; a stripline resonant ring disposed on the first surface of the substrate, and defining a discharge gap; a pair of electrode extensions connected to the stripline resonant ring at the discharge gap; a ground plane disposed on the second surface of the substrate; a gas flow element configured to flow gas between at least one of: (1) the discharge gap, and (2) the pair of electrode extensions; and a structure disposed adjacent the substrate to form an enclosure that substantially encloses at least a region including the discharge gap and the electrode extensions, the enclosure being adapted to contain a plasma.

Plasma generation device with split-ring resonator and electrode extensions

A device includes a first substrate having a principal surface having a plurality of sample sites having a corresponding sample; a second substrate having a principal surface facing and spaced apart from the principal surface of the first substrate, the second substrate having a plurality of ultraviolet emission sites corresponding to the sample sites of the first substrate, each of the ultraviolet emission sites being spaced apart from and facing a corresponding one of the sample sites of the first substrate, each of the ultraviolet emission sites being configured to emit ultraviolet light to a corresponding one of the sample sites on the first substrate, and to ionize at least a portion of a sample provided at each sample site; and an ion extraction device configured to extract ions from a gap between the first substrate and the structure.

Device and method using microplasma array for ionizing samples for mass spectrometry

Aspects of the invention include sample ionizing devices and methods of use thereof. Embodiments of the sample ionizing devices include a microplasma generation source with a plasma generation region, a sample input port for delivering a sample to the plasma generation region, and a gas flow element configured to flow gas through the microplasma generation source independently of the sample input port. The devices and methods of the invention find use in a variety of different applications, including analyte detection applications.

Microplasma-based sample ionizing device and methods of use thereof

The formation of a barrier layer over a high k dielectric layer and deposition of a conducting layer over the barrier layer prevents intermigration between the species of the high k dielectric layer and the conducting layer and prevents oxygen scavenging of the high k dielectric layer. One example of a capacitor stack device provided includes a high k dielectric layer of Ta O , a barrier layer of TaON or TiON formed at least in part by a remote plasma process, and a top electrode of TiN. The processes may be conducted at about 300 to 700&deg; C. and are thus useful for low thermal budget applications. Also provided are MIM capacitor constructions and methods in which an insulator layer is formed by remote plasma oxidation of a bottom electrode.

Processes for making a barrier between a dielectric and a conductor and products produced therefrom

The present invention provides a method of integrating tantalum oxide into an MIM capacitor for a semiconductor device, comprising the step of vapor-depositing the tantalum oxide from an oxygen-free liquid precursor and under process conditions comprising a deposition temperature of less than about 500&deg; C. and a deposition pressure of less than about 96 Torr, wherein the tantalum oxide is integrated into the MIM capacitor. Also provided is a method of forming an MIM capacitor comprising the step of integrating a tantalum oxide dielectric film with a tantalum nitride or a titanium nitride bottom electrode deposited on a substrate and a titanium nitride top electrode thereby forming an MIM capacitor.

Integration of CVD tantalum oxide with titanium nitride and tantalum nitride to form MIM capacitors

A method for improving the interface between a silicon nitride film and a silicon surface is described. According to the present invention a silicon nitride film is formed on a silicon surface of a substrate. While said substrate is heated the silicon nitride film is exposed to an ambient comprising hydrogen (H ). In a prefered embodiment of the present invention the ambient comprises H and N .

Anneal for enhancing the electrical characteristic of semiconductor devices

A method and apparatus for forming a titanium doped tantalum pentaoxide dielectric using a CVD process. According to the present invention a substrate is placed in the deposition chamber. A source of tantalum, a source of titanium, and an oxygen containing gas are then fed into the chamber. Thermal energy is used to decompose the source of tantalum to form tantalum atoms, and decompose the source of titanium to form titanium atoms in the deposition chamber. The titanium atoms, tantalum atoms and the oxygen containing gas then react to form a tantalum pentaoxide dielectric film doped with titanium.

Method and apparatus for forming a titanium doped tantalum pentaoxide dielectric layer using CVD

A method for improving the interface between a silicon nitride film and a silicon surface is described. According to the present invention a silicon nitride film is formed on a silicon surface of a substrate. While said substrate is heated the silicon nitride film is exposed to an ambient comprising hydrogen (H.sub.2). In a prefered embodiment of the present invention the ambient comprises H.sub.2 and N.sub.2.

Hydrogen anneal for curing defects of silicon/nitride interfaces of

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Mountain View, CA, United States of America

Randall Scott Urdahl