Nextreme Thermal Solutions, Inc.

Other

Randall G Alley

Rama Venkatasubramanian

David Alan Koester

Pratima V Addepalli

Edward P Siivola

Brooks O'Quinn

Thomas Colpitts

Kip D Coonley

John Posthill

Anil J Reddy

Bing A Shen

Jayesh Bharathan

Philip A Deane

Jesko Von Windheim

Thomas Peter Schneider

Cynthia Watkins

Michael Puchan

Mary Napier

A method of forming a thermoelectric device may include providing a substrate having a surface, and thermally coupling a thermoelectric p-n couple to a first portion of the surface of a substrate. Moreover, the thermoelectric p-n couple may include a p-type thermoelectric element and an n-type thermoelectric element. In addition, a thermally conductive field layer may be formed on a second portion of the surface of the substrate adjacent the first portion of the surface of the substrate. Related structures are also discussed.

Methods of forming embedded thermoelectric coolers with adjacent thermally conductive fields

A structure, system and method for controlling a temperature of a heat generating device in a solid medium, wherein heat is extracted from the medium into at least one heat extraction device, the heat extraction device dissipates heat into an environment apart from the medium by a heat sink thermally coupled to the heat extraction device; and heat from the medium is dissipated into the heat sink by a first thermal interface material thermally coupling the heat sink to the medium.

Thin film thermoelectric devices for hot-spot thermal management in microprocessors and other electronics

An electronic assembly may include a packaging substrate, an integrated circuit (IC) semiconductor chip, a plurality of metal interconnection structures, and a thermoelectric heat pump. The integrated circuit (IC) semiconductor chip may have an active side including input/output pads thereon and a back side opposite the active side, and the IC semiconductor chip may be arranged with the active side facing the first surface of the packaging substrate. The plurality of metal interconnection structures may be between the active side of the IC semiconductor chip and the first surface of the packaging substrate, and the plurality of metal interconnection structures may provide mechanical connection between the active side of the IC semiconductor chip and the first surface of the packaging substrate. The thermoelectric heat pump may be coupled to the packaging substrate with the thermoelectric heat pump being configured to actively pump heat between the IC semiconductor chip and the packaging substrate. Related methods and structures are also discussed.

Electronic assemblies providing active side heat pumping

A method of forming a thermoelectric device may include forming a pattern of conductive traces, and forming an electrically insulating matrix between the conductive traces of the pattern of conductive traces. In addition, a plurality of thermoelectric elements may be electrically and mechanically coupled to the pattern of conductive traces so that each conductive trace of the pattern of conductive traces has one of the plurality of thermoelectric elements thereon. In addition, the plurality of thermoelectric elements may be free of the electrically insulating matrix. Related methods and structures are also discussed.

Methods of forming thermoelectric devices including electrically insulating matrices between conductive traces

A thermoelectric device having at least one unipolar couple element () including two legs () of a same electrical conductivity type. A first-temperature stage () is connected to one of the two legs. A second-temperature stage () is connected across the legs of the at least one unipolar couple element. A third-temperature stage () is connected to the other of the two legs. Methods for cooling an object and for thermoelectric power conversion utilize the at least one unipolar couple element to respectively cool an object and produce electrical power.

Trans-thermoelectric device

A method of forming a thermoelectric device may include forming a plurality of islands of thermoelectric material on a deposition substrate. The plurality of islands of thermoelectric material may be bonded to a header substrate so that the plurality of islands are between the deposition substrate and the header substrate. More particularly, the islands of thermoelectric material may be epitaxial islands of thermoelectric material having crystal structures aligned with a crystal structure of the deposition substrate. Related structures are also discussed.

Methods of forming thermoelectric devices using islands of thermoelectric material and related structures

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Raleigh, NC, United States of America

Randall G Alley