The Whitaker Corporation

At&t Bell Laboratories

Tyco Electronics Corporation

Lytel Corporation

American Telephone & Telegraph Co., At&t Bell Laboratories

Digital Optics Corporation

Inplane Photonics, Inc.

Randall Brian Wilson

Ronald J Nelson

Terry P Bowen

Robert Wallace Roff

Ching-Long Jiang

Hongtao Han

Richard Alan Anderson

John Baker Breedis

William Ring

Mark S Soler

Paul R Besomi

Michael R Feldman

William Hudson Welch

Michael Aaron Kadar-Kallen

Robert A Boudreau

John R Rowlette, Sr

Robert D TeKolste

Amir Hanjani

Carl Gaebe

Robert Addison Boudreau, Sr

John D Kulick

Ping Zhou

Jared David Stack

John Edward Picot

Shwu L Lin

Mark Rafael Soler

A method and apparatus is provided for attaching an optical fiber to a waveguide formed on a planar lightguide circuit (PLC). The method begins by securing at least one joint element to a first surface of the PLC. The joint element has a beveled surface such that a gap is formed between the joint element and the first surface of the PLC. The gap is adjacent to an end face of the waveguide. The waveguide end face extends in a plane that includes a transverse surface of the joint element to define therewith a first mating surface. The optical fiber is secured to a support member such that an end face of the optical fiber extends in a plane that includes a transverse surface of the support member to define a second mating surface therewith. The waveguide end face is aligned with the optical fiber end face. An adhesive is applied to an interface defined between the first and second mating surfaces so that the first and second mating surfaces are fixed together, whereby adhesive that would otherwise enter an optical path located between the waveguide end face and the optical fiber end face is diverted into the gap.

Method of attaching optical fibers to integrated optic chips that excludes all adhesive from the optical path

The present invention relates to a technique for fabricating a mechanical or visual alignment fiducial on a laser die particularly adapted for application with a laser die that is a buried structure edge emitting laser. In fabricating the device, the fiducial and the active mesa are formed in the same photolithography patterning step, using conventional techniques. The active is then buried with regrowth layers. The regrowth layers are subsequently selectively etched to expose the fiducial, leaving the active region protected and buried.

Method for fabricating fiducials for passive alignment of opto-electronic devices

An edge emitting laser comprising a substrate with or without a buffer layer having a central mesa disposed thereon, said central mesa having a bottom surface, a top surface and side surfaces and said mesa having an active layer disposed on said substrate with or without a buffer layer, a cladding layer disposed on said active layer, and a quaternary layer disposed on said cladding layer; first and second blocking layers disposed along said sides of said mesa; and at least one alignment fiducial disposed along an outer region of the laser, said alignment fiducial comprising at least a first surface and a second surface, said first surface being a certain distance from said active layer in the y-direction and said second surface being a certain distance from said active layer in the x-direction, said first surface comprising at least a portion of the top of said quaternary layer, said second surface comprising at least a portion of a side of at least one of said quaternary, cladding, or active layers.

Regrown notch laser

An optical bidirectional link comprising: a module having a lower surface and an upper surface. The upper surface having disposed thereon a submodule having an optical transmitter and detector mounted thereon. Circuitry mounted on the upper surface. The circuitry having electronic components for effecting bidirectional communication via the optical transmitter and detector. A cover disposed over the upper surface of the module, wherein the submodule further comprises a silicon substrate having an optical fiber disposed in v-groove, a laser, reflective surfaces, and a holographic plate disposed on an upper surface of the silicon substrate.

Bidirectional link submodule with holographic beamsplitter

An optical subassembly for monitoring the emission of a semi-conductor laser is disclosed. The subassembly is diced from a wafer having mounted thereon the devices to be tested as well as the testing optical devices. The devices of the wafer are burned-in and those sections of the wafer having lasers that pass the burn-in testing are diced and form the subassemblies of the present invention.

Monitor-detector assembly on silicon wafer board

A bi-directional optical link, comprising: a light source for transmitting light at a first wavelength; a photodetector in substantially linear arrangement with the light source for detection of light of a second wavelength; and an optical fiber for carrying light of the second wavelength to the photodetector and for carrying light of the first wavelength from the light source, the optical fiber in substantially linear arrangement with the photodetector and the light source.

Line bi-directional link

A connector assembly includes an active fiber needle 1 having a passive or active optical device 6 connected to an end face 7 of a thick metallized coating 4 and a cup-shaped mount 10 for hermetically enclosing the optical device. The mount 10 hermetically encloses the optical device 6 and provides heat dissipation and electrical connections for optical device 6. The cup-shaped mount may include a ceramic tubular sleeve hermetically sealed to the metal coating 4 on the fiber needle 1 about a central bore 12A thereof. Electrical connections between the optical device 6 and devices external to the mount may preferably be provided through a spring contact 18 which is soldered to terminals on device 6 and has at least one leg 18A, 18B extending through the hermetically sealed cup-shaped housing 10. Other embodiments of electrical lead connections may be provided by wire bonds 24 between device 6 and external metallization surfaces 26A.

Submount and connector assembly for active fiber needle

An optical connection for connecting an active optical device (6,52) or a passive optical device (41,63) to an optical fiber (3), having a thick metal coating (2) deposited circumferentially around the fiber. In this optical connection the device (6,52,41,63) is bonded to the polished endface of the fiber (5), with particular use being made of the thick metal surface (7) on the endface of the fiber. In another embodiment, the optical fiber (3) is etched to form various surfaces (31,32,33) for optical coupling. This etching also allows for accurate passive alignment of an etched active device (52) or a passive device (42,63) with the optical fiber.

Active fiber needle

A method for activating the zinc dopant in an active layer of a Group III/Group V semiconductor device comprises forming a layer of zinc doped Group III/Group IV material, and thereafter annealing the layer at a predetermined temperature and for a predetermined time sufficient to convert inactive zinc in the layer to acceptor zinc. In a preferred embodiment of the invention, a method for activating zinc dopant in the active layer of an InP-InGaAsP double heterostructure comprises annealing the active layer at a temperature of about 625.degree. C. for at least about 190 seconds which converts inactive zinc to acceptor zinc without substantially decreasing the total zinc in the active layer. In another preferred embodiment, a method for increasing the power output of InP-InGaAsP optoelectronic semiconductor device, such as a laser or an LED having a zinc doped active layer, comprises annealing the active layer of the semiconductor device at a temperature of about 625.degree. C. for at least about 190 seconds.

Method for activating zinc in semiconductor devices

A method of fabricating a solid state device having chemically bound arsenic and phosphorous includes carrying out liquid phase epitaxial growth in the presence of partial pressures of arsenic and phosphorus.

Method for liquid phase epitaxial growth

A buried hetero-structure laser diode is disclosed. The buried hetero-structure is formed by growing a double hetero-structure on a substrate. The double hetero-structure comprises two cladding layers spaced apart by a narrow bandgap active layer. Two spaced apart channels are etched in the double hetero-structure down to the lower cladding layer to define a mesa therebetween. Current blocking layers are deposited in the channels and on the portions of the double hetero-structure located outside the channels. The liquid phase epitaxy growth conditions are such that while the blocking layers are deposited in the channels and outside the channels, the upper cladding layer portion of the mesa is being melted back. Thus, the ends of the blocking layers touching the melted back mesa are separated from the active layer portion of the mesa by a thickness substantially less than the thickness of the upper cladding layer as measured in the regions outside the channels.

Buried hetero-structure laser diode

In the fabrication of buried heterostructure InP/InGaAsP lasers, mask undercutting during the mesa etching step is alleviated by a combination of steps which includes the epitaxial growth of a large bandgap InGaAsP cap layer (1.05 eV.ltorsim.E.sub.g .ltorsim.1.24 eV) and the plasma deposition of a SiO.sub.2 etch masking layer. Alternatively, the cap layer may be a bilayer: an InGaAs layer or narrow bandgap InGaAsP (E.sub.g .ltorsim.1.05 eV), which has low contact resistance, and a thin InP protective layer which reduces undercutting and which is removed after LPE regrowth is complete. In both cases, etching at a low temperature with agitation has been found advantageous.

Buried heterostructure devices with unique contact-facilitating layers

Thermal degradation of compound single crystal substrates (e.g., InP) containing a relatively volatile element (e.g., P) prior to LPE growth has been virtually eliminated by an improved protection technique. A partial pressure of the volatile element is provided by a solution (e.g., Sn-In-P) localized inside a chamber which is external to the LPE boat and which surrounds substrate prior to growth, thereby preventing thermal damage to the substrate surface. Applicability of the technique to other epitaxial growth processes (e.g., VPE and MBE) is also discussed.

Growing community of inventors

Maplewood, NJ, United States of America

Randall Brian Wilson