Globalfoundries Inc.

Randall Brault

John J Ellis-Monaghan

Steven M Shank

Jay Sanford Burnham

Device structures for field-effect transistors and methods of forming device structures for a field-effect transistor. A first dielectric layer is formed on a semiconductor layer and nitrided. A nitrogen-enriched layer is formed at a first interface between the first dielectric layer and the semiconductor layer. Another nitrogen-enriched layer is formed at a second interface between the semiconductor layer and a second dielectric layer. Device structures may include field-effect transistors that include one, both, and/or neither of the nitrogen-enriched layers.

Growing community of inventors

Essex Junction, VT, United States of America

Randall Brault