Other

Wide Bandgap LLC

Northrop Grumman Systems Corporation

Ranbir Singh

Eric Jonathan Stewart

Rowland C Clarke

Marc Eisenzweig Sherwin

Ty Richard McNutt

Stephen Van Campen

Frank Sefcik

Ty R Mcnutt

In an embodiment, a integrated semiconductor device includes a first Vertical Junction Field Effect Transistor (VJFET) having a source, and a gate disposed on each side of the first VJFET source, and a second VJFET transistor having a source, and a gate disposed on each side of the second VJFET source. At least one gate of the first VJFET is separated from at least one gate of the second VJFET by a channel. The integrated semiconductor device also includes a Junction Barrier Schottky (JBS) diode positioned between the first and second VJFETs. The JBS diode comprises a metal contact that forms a rectifying contact to the channel and a non-rectifying contact to at least one gate of the first and second VJFETs, and the metal contact is an anode of the JBS diode. A first electrical connection ties the gates of the first VJFET, the gates of the second VJFET, and the anode of the JBS diode to a common gate electrode and a second electrical connection ties the source of the first VJFET and the source of the second VJFET to a common source electrode.

Power switching transistors

Here, we demonstrate new material/structures for the photodetectors, using semiconductor material. For example, we present the Tunable Avalanche Wide Base Transistor as a photodetector. Particularly, SiC, GaN, AlN, Si and Diamond materials are given as examples. The desired properties of an optimum photodetector is achieved. Different variations are discussed, both in terms of structure and material.

Method, apparatus, material, and system of using a high gain avalanche photodetector transistor

A Lateral Epitaxial Gallium Nitride metal insulator semiconductor field effect transistor (LEGaN-MISFET) is described that includes a body region including at least one layer formed of Gallium Nitride having a first conductivity type formed on the substrate; a resurf layer of Gallium Nitride having a second conductivity type formed the body region; a source region in contact with the resurf layer; a drain region, in contact with the resurf layer and spaced apart from the source region; a gate metal insulator semiconductor (MIS) structure in contact with the body region including a gate contact; and a MIS conductive inversion channel along the surface of the body region in contact with the gate MIS structure. A lateral current conduction path may be formed in the resurf layer between the source region and the drain region connected by the MIS channel, where the lateral current conduction path is controlled by an applied gate source bias.

Lateral epitaxial GaN metal insulator semiconductor field effect transistor

A voltage booster transistor with an optimal conducting path formed in widebandgap semiconductors like Silicon Carbide and Diamond, is provided as a power transistor with a voltage rating &#x3e;200V. Contrary to conventional vertical design of power transistors, a higher, optimum doping for a given thickness supports higher Source/Drain blocking voltage. A topside and backside gate region of the opposite conductivity type than the channel region providing control of source to drain current path through a small gate voltage. The backside gate and the Drain junction are able to support the rated blocking voltage of the device.

Lateral super junction field effect transistor

A lateral power diodes with an optimal drift doping formed in widebandgap semiconductors like Silicon Carbide, Aluminum Nitride and Gallium Nitride and Diamond are provided with a voltage rating greater 200V. Contrary to conventional vertical design of power diodes, a higher, optimum doping for a given thickness is critical in supporting higher anode/cathode blocking voltage, and lower on-resistance than vertical drift region designs. The backside contact and the anode junction must be able to support the rated blocking voltage of the device.

Lateral power diodes

A lateral channel transistor with an optimal conducting channel formed in widebandgap semiconductors like Silicon Carbide and Diamond is provided. Contrary to conventional vertical design of power transistors, a higher, optimum doping for a given thickness supports higher source/drain blocking voltage. A backside gate is insulated from the channel region using a low doped layer of the opposite conductivity type than the channel region to support the rated blocking voltage of the device.

Lateral channel transistor

A lateral drift vertical metal-insulated field effect transistor (LDVMISFET) with an optimum conducting channel formed in Silicon Carbide, is provided as a power transistor with a voltage rating of greater than 200 V. The lateral drift region achieves a better on-resistance/breakdown voltage trade-off than the conventional vertical drift region design of power MOSFETs. This is achieved by using an optimal doping and thickness for the voltage blocking and current conduction. The drain and backside terminal is able to support at least the rated blocking voltage of the device. A vertical MIS channel may be formed on the favorable 11-20 plane to achieve a higher MIS channel mobility as compared to the conventional 0001 or 000-1 planes resulting in a much lower on-resistance for the same blocking voltage as compared to conventional vertical MOSFET with similar blocking voltage.

Lateral drift vertical metal-insulator semiconductor field effect transistor

A disposable wire driver for inserting wires into or through bones to provide support and fixation for the bone while the bone structure is mending. As unused, the wire driver is enclosed in a sterility-preserving wrapper that protects the wire driver until it is ready for use. The wire driver is disposable after a single use and is constructed largely of plastic. The wire driver includes an elongated, plastic casing having a front opening at a front end of the casing, and a back opening at a back end of the casing. A wire passageway extends through the casing from the back opening to the front opening to allow a wire to be inserted into the back opening and through the wire driver. The casing encloses a motor and a battery coupled to the motor. The battery-powered motor drives a pinion-and-gear assembly which is connected to a wire holding tube. The collet extends through the front opening of the casing and selectively grips a wire inserted into the wire driver.

Growing community of inventors

South Riding, VA, United States of America

Ranbir Singh