Samsung Sdi Co., Inc.

Cheil Industries Inc.

Ran Namgung

Jaehyun Kim

Seung-Hyun Kim

Taeho Kim

Sung-Hyun Jung

Young Min Kim

Sangshin Lee

Ho Kuk Jung

Seungyong Chae

Yu-Mi Heo

Sung-Hwan Kim

Hwan-Sung Cheon

Kipo P Jang

Seungin Park

Hyo-Young Kwon

Dominea Rathwell

Kyung Soo Moon

Yoong Hee Na

Hyeon-Il Jung

Kyungsoo Moon

Hyun-Ji Song

Jimin Kim

Seung Ryong Han

Tae-ho Kim

Byoungkwan Lee

Youn-Hee Nam

Yun-Jun Kim

Youngkyoung Jo

Hwansung Cheon

Soo-Hyoun Mun

Changsoo Woo

Hyo Young Kwon

Seung Yong Han

Younhee Nam

Eunmi Kang

Soohyoun Mun

Yoo-Jeong Choi

Hyunji Song

You-Jung Park

Sunwoong Shin

Seulgi Jeong

Yu-Shin Park

Hyeonil Jung

Yoonman Lee

Sunhae Kang

Yumi Heo

A semiconductor photoresist composition includes an organometallic compound represented by Chemical Formula 1, an organic acid having a vapor pressure of less than or equal to about 1.0 mmHg at 25° C., and a pKa of about 3 to about 5, and a solvent. A method of forming photoresist patterns utilizes the composition

Semiconductor photoresist composition and method of forming patterns using the composition

A semiconductor photoresist composition includes an organometallic compound represented by Chemical Formula 1, a photoacid generator (PAG), and a solvent: In Chemical Formula 1, R is a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 aliphatic unsaturated organic group including at least one double bond or triple bond, a substituted or unsubstituted C6 to C30 aryl group, an ethoxy group, a propoxy group, or a combination thereof; and X, Y, and Z are each independently —ORor —OC(═O)R.

A semiconductor resist composition includes an organometallic compound represented by Chemical Formula 1 and a solvent: wherein, in Chemical Formula 1, Ris an aliphatic hydrocarbon group, an aromatic hydrocarbon group, or an -alkyl-O-alkyl group, and Rto Rare each independently selected from &#x2014;ORand &#x2014;OC(&#x2550;O)R. The semiconductor resist composition may have excellent solubility and storage stability.

Semiconductor resist composition, and method of forming patterns using the composition

A semiconductor resist composition includes-an organometallic compound represented by Chemical Formula 1 and a solvent: wherein, in Chemical Formula 1, Ris an aliphatic hydrocarbon group, an aromatic hydrocarbon group, or an -alkyl-O-alkyl group, and Rto Rare each independently selected from &#x2014;ORand &#x2014;OC(&#x2550;O)R. The semiconductor resist composition may have excellent solubility and storage stability.

A semiconductor photoresist composition includes an organometallic compound represented by Chemical Formula 1, an organometallic compound represented by Chemical Formula 2, and a solvent, and a method of forming patterns using the same. When the semiconductor photoresist composition is irradiated with e.g., extreme ultraviolet light, radical crosslinking between Sn-containing units may occur via Sn&#x2014;O&#x2014;Sn bond formation, and a photoresist polymer providing excellent sensitivity, small or reduced line edge roughness, and/or excellent resolution may be formed.

Disclosed are a semiconductor photoresist composition including an organometallic compound including at least one selected from compounds represented by Chemical Formulae 1 to 3 and a solvent, and a method of forming patterns using the semiconductor photoresist composition on an etching-objective layer to form a photoresist layer, patterning the photoresist layer to form a photoresist pattern, and etching the etching-objective layer using the photoresist pattern as an etching mask. 

Semiconductor photoresist composition, and method of forming patterns using the composition

A semiconductor resist composition includes an organometallic compound represented by Chemical Formula 1 and a solvent: 

A semiconductor resist composition includes-an organometallic compound represented by Chemical Formula 1 and a solvent:  wherein, in Chemical Formula 1, Ris an aliphatic hydrocarbon group, an aromatic hydrocarbon group, or an -alkyl-O-alkyl group, and Rto Rare each independently selected from &#x2014;ORand &#x2014;OC(&#x2550;O)R. The semiconductor resist composition may have excellent solubility and storage stability.

A semiconductor resist composition includes an organometallic compound represented by Formula I and a solvent: wherein L includes at least one alkylene group in the main chain. A pattern may be formed using the composition. The pattern formed by using the semiconductor resist composition may not collapse while having a high aspect ratio. 

A monomer, an organic layer composition, an organic layer, and a method of forming a pattern, the monomer being represented by the following Chemical Formula 1: 

Monomer, organic layer composition, organic layer, and method of forming patterns

A polymer, an organic layer composition, and a method of forming patterns, the polymer including a structural unit represented by Chemical Formula 1: 

Polymer, organic layer composition, and method of forming patterns

A polymer including a moiety represented by Chemical Formula 1, an organic layer composition including the polymer, an organic layer manufactured from the organic layer composition, and a method of forming patterns using the organic layer composition are provided. The definitions of the Chemical Formula 1 are the same as defined in the detailed description.

Polymer, organic layer composition, organic layer, and method of forming patterns

An organic layer composition, an organic layer, and associated methods, the composition including a polymer that includes a moiety represented by Chemical Formula 1, a monomer represented by Chemical Formula 2, and a solvent, 

Organic layer composition, organic layer, and method of forming patterns

A polymer includes a first moiety represented by Chemical Formula 1, and a second moiety including a substituted or unsubstituted C6 to C60 cyclic group, a substituted or unsubstituted C6 to C60 hetero cyclic group, or a combination thereof: In Chemical Formula 1, X is phosphorus (P), nitrogen (N), boron (B), or P&#x2550;O, Y1 and Y2 are independently hydrogen or a moiety including at least one substituted or unsubstituted benzene ring, provided that at least one of Y1 and Y2 is the moiety including at least one substituted or unsubstituted benzene ring, Y3 is another moiety including at least one substituted or unsubstituted benzene ring, and * is a linking point.

A monomer, a polymer, an organic layer composition, an organic layer and associated methods, the monomer being represented by Chemical Formula 1: 

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Ran Namgung