Kulicke and Soffa Investments, Inc.

Marvell Israel (misl) Ltd.

Ran Manor

Eli Kurin

Gil Weisman

Yair Faiershtein

Oded Wertheim

Ilan Weishauss

Test samples for use in conducting integrated circuit alpha particle emissions testing, processes for preparing test samples for use in conducting integrated circuit alpha particle emissions testing, and processes for conducting integrated circuit alpha particle emissions testing using the test samples, are described. The approach takes into account the effects of the relative physical positions of the respective components within a final integrated circuit package, and takes into account the effect of contamination of individual components or of the integrated circuit package as a whole due to conditions and/or processes performed during the production process. The described approach relates to test sample preparation and integrated circuit alpha particle emissions testing for integrated circuits in which the alpha particle emission levels are extremely low, i.e., in the ultra low alpha region, for example, alpha particle emissions less than 0.002 cph/cm.

Integrated circuit sample preparation for alpha emission measurements

A method for singulating semiconductor wafers comprises the steps of aiming a first and a second laser beam over a top surface of the substrate; forming scribe lines in the coating layer by scanning the first laser beam across the coating layer; and cutting through the substrate along the scribe lines with the second laser beam to form a respective kerf. The apparatus includes a first laser having a first wavelength placed over the coating layer of the substrate, and a second laser having a second wavelength different from that of the first laser placed over a surface of the substrate. The coating layer has a first absorption coefficient relative to a wavelength of the first laser and the semiconductor substrate has a second absorption coefficient less than the first absorption coefficient. Energy from the first laser beam is absorbed into the coating layer to form scribe lines therein, and the second laser beam cuts through the substrate along the scribe lines.

Dual laser cutting of wafers

A method for laser scribing a semiconductor substrate with coatings on top. The method comprises the steps of focusing a laser beam on a top surface of the substrate coating; absorbing energy from the laser into the coating layer; forming a first set of scribe lines in a first direction on the substrate by scanning the laser beam across the surface of the substrate to evaporate portions of the coating layer; and forming a second set of scribe lines in a second direction on the surface of the substrate substantially orthogonal to the first set of scribe lines to evaporate portions of the layer.

Method for laser scribing of wafers

A method and apparatus for singulating semiconductor wafers is described. The method comprises the steps of aiming a laser beam at a layer placed over the substrate; absorbing energy from the laser beam into the layer; forming scribe lines in the layer by scanning the laser beam across the layer; and cutting through the substrate along the scribe lines with a saw blade to singulate the wafer. The apparatus includes a laser placed over the coating layer of the substrate, and a saw blade mounted over a surface of the substrate. The coating layer has a first absorption coefficient relative to a wavelength of the laser and the semiconductor substrate has a second absorption coefficient less than the first absorption coefficient. Energy from the laser beam is absorbed into the coating layer to form scribe lines therein, and the saw blade cuts through the substrate along the scribe lines.

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Haifa, Israel

Ran Manor