Industrial Technology Research Institute

Taiwan Semiconductor Manufacturing Comp. Ltd.

Ran-Jin Lin

Jing-Hung Chiou

Li-Jui Chen

Ru-Shi Liu

Shih-Ping Lee

Kai-Hsiang Yen

Nai-Hao Kuo

Hsiu-Hsiang Chen

Jih-Wen Wang

Yeow-Chin Chen

Kaihsiang Yen

Kuo-Kang Liu

Kun-Ho Chou

Jia-Hroung Wu

Within a Fabry-Perot filter apparatus, a method for fabricating the Fabry-Perot filter apparatus and a method for operating the Fabry-Perot filter apparatus, there is employed a Fabry-Perot filter and at least one color filter layer, both assembled over a substrate and covering at least two optical transducer elements which are formed within the substrate. Within the foregoing apparatus and methods, the at least one color filter layer comprises at least two color filter elements of separate color, each registered with a separate optical transducer element within the at least two optical transducer elements. The apparatus and methods provide for enhanced optical discrimination properties.

Fabry-Perot filter apparatus with enhanced optical discrimination

A method for fabricating a tunable, 3-dimensional solenoid utilizing CMOS fabrication technology and a back end process without using photomasks are described. In the method, two curved arms each formed of a bi-layered metal structure from metals that have different coefficients of thermal expansion for residual stress are utilized for connecting to two ends of an inductor coil formed of AlCu between the two arms. When the insulating layer of silicon dioxide is removed from the curved arms, the free ends of the arms curve up and thus, raise the inductor coil away from the surface of the semiconductor substrate into a 3-dimensional structure. When electrical voltage is applied between lower electrodes formed on the substrate and the curved arms, electrostatic force is generated to further control the length of the inductor coil by pulling down or raising the curved arms.

Method for fabricating a tunable, 3-dimensional solenoid and device fabricated

A microelectronic tunable capacitor and a method for fabricating the capacitor are described. The capacitor is formed by a micro-actuator, a first fixed capacitor plate and a second swayable capacitor plate suspended over the first plate. The micro-actuator is formed by a pair of fixed electrodes positioned spaced-apart from each other sandwiching without contact a suspended arm electrode swayable between the pair of fixed eletrodes. The second swayable capacitor plate is mounted to the suspended arm and sways by an electrostatic force between the pair of fixed electrodes to suitably adjust a desirable capacitance for the tunable capacitor.

Microelectronic tunable capacitor and method for fabrication

A non-invasive blood glucose meter includes a near-infrared energy analyzer which includes a light filter assembly of two Fabry-Perot interferometers and a photosensor. The near-infrared energy analyzer detects near-infrared energy absorbed by a human or animal body and generates spectra of such absorption so that the blood glucose content in the body may be analyzed. In order to provide stable energy absorption information of the blood, special designs are provided to stabilize the light source, to calibrate the spectrum and to obviate the noise from the heartbeats of the body. A single crystal silicon elastic power source is used to provide the driving power of the Fabry-Perot interferometer to avoid mechanical hysteresis.

Non-invasive blood glucose meter

An apparatus and method for continuously monitoring the liquid nitrogen level a liquid nitrogen container and automatically refilling liquid nitrogen from a liquid nitrogen reservoir when the liquid nitrogen in the container falls below a predetermined level. The apparatus comprises a liquid nitrogen level sensing element, which contains a superconducting material, such as a YbaCuO type superconductiing material, disposed on a non-conducting substrate, such as magnesium oxide. The superconducting material is selected such that it has a critical temperature approximately equal to the boiling point temperature of liquid nitrogen. The superconducting material is placed near the predetermined level and, under normal conditions, the superconducting material exhibits zero or near zero resistance. When the level of liquid nitrogen falls below the predetermined level due to heat loss or other reasons, the resistance of the superconducting material will increase substantially, thus triggering a control means to open a solenoid valve and allow liquid nitrogen to flow from the reservoir to the container. The liquid nitrogen level sensing element can be prepared by photochemically etching a superconducting layer, which has been deposited on the non-conducting substrate, in accordance with a serpentine design, to thereby increase the sensitivity and reliability thereof.

YBA CUO-type superconducting material based apparatus for auto-filling

A process for making high temperature superconducting oxide films comprising using a sintered body of Y-Ba-Cu-O or Bi-Sr-Ca-Cu-O oxide as a sputtering target and using a mixture of argon and oxygen as a sputtering gas, forming glow discharge between the substrate and the target under a pressure of 0.5-2.5 torr and at a sputtering current density of 5-35 mA/cm.sup.2, and then cooling the substrate after the oxide film has been grown to a desired thickness. The critical temperature of the in-situ produced superconducting oxide film of Y-Ba-Cu-O is 90 K and that of Ba-Sr-Ca-Cu-O is 80 K. An apparatus for the preparation of high temperature superconducting oxide films is also provided. The apparatus for in-situ making such high temperature superconducting oxide film is easy to heat the substrate and control its temperature without problems of conventional deposition methods.

Process for making high temperature superconducting oxide films

A process for making high temperature superconducting oxide films comprising using a sintered body of Y--Ba--Cu--O or Bi--Sr--Ca--Cu--O oxide as a sputtering target and using a mixture of argon and oxygen as a sputtering gas, forming glow discharge between the substrate and the target under a pressure of 0.5-2.5 torr and at a sputtering current density of 5-35 mA/cm.sup.2, and then cooling the substrate after the oxide film has been grown to a desired thickness. The critical temperature of the in-situ produced superconducting oxide film of Y--Ba--Cu--O is 90 K. and that of Ba--Sr--Ca--Cu--O is 80 K. An apparatus for the preparation of high temperature superconducting oxide films is also provided. The apparatus for in-situ making such high temperature superconducting oxide film is easy to heat the substrate and control its temperature without problems of conventional deposition methods.

Growing community of inventors

Hsinchu, Taiwan

Ran-Jin Lin