Applied Materials Israel Limited

Ran Goldman

Ishai Schwarzband

Roman Kris

Yakov Weinberg

Ofer Adan

Shimon Levi

Dhananjay Singh Rathore

Itay Zauer

Olga Novak

Yan Ivanchenko

Efrat Noifeld

Ori Shoval

Dan Lange

Arbel Englander

A method for determining overlay between layers of a multilayer structure may include obtaining a given image representing the multilayer structure, obtaining expected images for layers of the multilayer structure, providing a combined expected image of the multilayer structure as a combination of the expected images of said layers, performing registration of the given image against the combined expected image, and providing segmentation of the given image, thereby producing a segmented image, and maps of the layers of said multilayered structure. The method may further include determining overlay between any two selected layers of the multilayer structure by processing the maps of the two selected layers together with the expected images of said two selected layers.

Technique for measuring overlay between layers of a multilayer structure

A Critical Dimensions Scanning Electron Microscope (CD-SEM) is described that comprises a unit for performing CD-SEM measurements of a semiconductor wafer, a BSE imaging unit for obtaining a Grey Level image (GL) of the wafer, and a unit for GL analysis and for processing the GL analysis results with reference to results of the CD-measurements.

CD-SEM technique for wafers fabrication control

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Hod Hasharon, Israel

Ran Goldman