University of California

Ramya Yeluri

Umesh Kumar Mishra

Srabanti Chowdhury

Ilan Ben-Yaacov

Christophe Hurni

Stacia Keller

Silvia H Chan

Jing Lu

Matthew A Laurent

Xiang Liu

Jeonghee Kim

A current aperture vertical electron transistor (CAVET) with ammonia (NH) based molecular beam epitaxy (MBE) grown p-type Gallium Nitride (p-GaN) as a current blocking layer (CBL). Specifically, the CAVET features an active buried Magnesium (Mg) doped GaN layer for current blocking purposes. This structure is very advantageous for high power switching applications and for any device that requires a buried active p-GaN layer for its functionality.

Current aperture vertical electron transistors with ammonia molecular beam epitaxy grown p-type gallium nitride as a current blocking layer

A method of fabricating a III-nitride semiconductor device, including growing an III-nitride semiconductor and an oxide sequentially to form an oxide/III-nitride interface, without exposure to air in between growth of the oxide and growth of the III-nitride semiconductor.

Metalorganic chemical vapor deposition of oxide dielectrics on N-polar III-nitride semiconductors with high interface quality and tunable fixed interface charge

Current aperture vertical electron transistors with ammonia molecular beam epitaxy grown P-type gallium nitride as a current blocking layer

Growing community of inventors

Santa Barbara, CA, United States of America

Ramya Yeluri