Rca Inc.

Sarnoff Corporation

General Electric Company

David Sarnoff Research Center, Inc.

Lamina Ceramics, Inc.

Dialog Semiconductor Gmbh

Ramon Ubaldo Martinelli

Peter Alan Levine

Donald J Sauer

Robert Amantea

John Charles Connolly

Ashok Narayan Prabhu

Barry Jay Thaler

Ellen Schwartz Tormey

Mark Stuart Hammond

Ponnuswamy Palanisamy

Joseph B Mazzochette

Hooman Mohseni

Joseph H Abeles

Michael Ettenberg

Henry Kressel

Attiganal Narayanaswamy Sreeram

Alvin M Goodman

Nathaniel Joseph McCaffrey

Dmitri Z Garbuzov

Pamela Kay York

Martin Kwakernaak

Gregory H Olsen

Alan Michael Braun

Robert J McIntyre

Paul H Robinson

Norbert W Brackelmanns

Raymond Joseph Menna

Viktor Borisovitch Khalfin

Alan Richard Sugg

Hao Lee

Paul A Longeway

Nancy Ann Morris

Victor Borisovich Khalfin

Attiganal Narayanaswamysreeram

Robert James Andreas

A high power laser system including: a plurality of emitters each including a large area waveguide and a plurality of quantum well regions optically coupled to the large area waveguide, wherein each of the quantum well regions exhibits a low modal overlap with the large area waveguide; a collimator optically coupled to the emitters; a diffraction grating optically coupled through the collimator to the emitters; and, an output coupler optically coupled through the diffraction grating to the emitters.

High power diode laser based source

A semiconductor laser device includes a substrate having on a surface thereof a semiconductor diode laser portion and a linear amplifier portion. Each of the laser portion and amplifier portion has a waveguide layer with the waveguide layers being in alignment. The laser portion is of a structure which permits it to generate radiation and emit the radiation from one end. The amplifier has an end that receives the radiation from the laser portion, and another end with emits the radiation after the radiation is amplified. The device emits FM radiation but not IM radiation.

Combined single-frequency laser and linear amplifier

Integrated packages incorporating multilayer ceramic circuit boards mounted on a metal support substrate can be used for temperature control by the metal support substrate. Various electronic components, as well as additional temperature control devices, can be connected to the circuit boards and to the metal support substrate to control or regulate the temperature of operation of the components. The integrated package can be hermetically sealed with a lid.

Low temperature co-fired ceramic-metal packaging technology

A three-dimensional imaging range finder is disclosed using a transmitted pulse reflected from a target. The range finder includes a pixel sensor for receiving light from the target and the reflected pulse. A global counter is provided for determining a time-of-flight value of the transmitted pulse by providing accurate count data to pixel memories. A processing circuit, which is coupled to the pixel sensor and the global counter, extracts the reflected pulse received by the pixel sensor, and stores the time-of-flight value upon extracting the reflected pulse. The pixel sensor provides a luminance signal and the processing circuit includes a high pass filter to extract the reflected pulse from the luminance signal.

High resolution 3-D imaging range finder

An infrared imager includes an array of capacitance sensors that operate at room temperature. Each infrared capacitance sensor includes a deflectable first plate which expands due to absorbed thermal radiation relative to a non-deflectable second plate. In one embodiment each infrared capacitance sensor is composed of a bi-material strip which changes the position of one plate of a sensing capacitor in response to temperature changes due to absorbed incident thermal radiation. The bi-material strip is composed of two materials with a large difference in thermal expansion coefficients and an amorphans silicon a corbide layer.

Infrared imager using room temperature capacitance sensor

Integrated heat sinking packages using low temperature co-fired ceramic metal circuit board technology

An infrared imager includes an array of capacitance sensors that operate at room temperature. Each infrared capacitance sensor includes a deflectable first plate which expands due to absorbed thermal radiation relative to a non-deflectable second plate. In one embodiment each infrared capacitance sensor is composed of a bi-material strip which changes the position of one plate of a sensing capacitor in response to temperature changes due to absorbed incident thermal radiation. The bi-material strip is composed of two materials with a large difference in thermal expansion coefficients.

A thermophotovoltaic cell and diode photodetector having improved open circuit voltage and high internal efficiency includes a semiconductor body having regions of n-type conductivity and p-type conductivity adjacent each other to form a p-n junction therebetween. The p-type region is of a material having a band gap which will absorb black-body radiation and the n-type region is of a material having a wider band gap than that of the p-type region. This forms a heterojunction between the two regions. The region of n-type region has a doping level which is an order of magnitude less than the doping level in the p-type region. This structure forms a cell having a space charge region in the n-type region.

Heterojunction thermophotovoltaic cell

A semiconductor laser diode which emits radiation in the 2-5 micrometer wavelength range and operates at room temperature. The laser diode includes an active layer of an In.sub.x Ga.sub.1-x As.sub.y Sb.sub.1-y alloy and a separate cladding layer on each side of the active layer. One of the cladding layers is of n-type conductivity and the other cladding layer is of p-type conductivity. At least the n-type cladding layer, and preferably both cladding layers, are of either an InAlPSb or an InGaPSb alloy.

Room temperature diode laser emitting in the 2-5 micrometer wavelength

A photoconductive detector comprises a substrate layer of semiconductor material of a first conductivity type substantially transparent of light at the wavelength to be detected and doped sufficiently to provide ohmic contact to the photoconductive active region overlying said substrate layer. The active region comprises a body of undoped semiconductor material absorptive of light at the wavelength to be detected, having first and second major surfaces. The substrate layer serves as a first ohmic contact for the entire first major surface of the active region and a metal or metal alloy serves as a second ohmic contact overlying the entire second major surface of said active region.

Vertical photoconductive detector

A photodetector comprising a light absorptive region, a wide bandgap region adjacent to the light absorptive region and a region of a first conductivity type extending through the wide bandgap region into the light absorptive region is improved by the incorporation of a lattice matched, intermediate bandgap region between the wide bandgap region and the light absorptive region. The p-n junction lies in the intermediate bandgap region in proximity to the interface thereof with the light absorptive region. The quantum efficiency of the disclosed device is significantly improved over prior art devices.

Photodetector

A semiconductor device structure incorporates a semiconductor wafer having first and second opposing major surfaces and an edge. A first region of first conductivity type is contiguous with the second surface and includes an edge portion which is contiguous with the wafer edge at the first surface. A second region, of second conductivity type, extends into the wafer from the first surface so as to form a PN junction with the first region at a predetermined depth from the first surface. A third region, of second conductivity type, extends into the wafer from the first surface to a depth greater than the predetermined depth. The third region is disposed between and is contiguous with the second region and the edge portion of the first region. When the wafer is silicon the third region has an areal charge concentration of approximately 1 to 2.times.10.sup.12 cm.sup.-2.

Semiconductor structure for electric field distribution

A vertical MOSFET includes source and gate electrodes on a major semiconductor surface, and a drain electrode on an opposing semiconductor surface. A shield electrode is disposed in proximity to the gate electrode so as to minimize feedback capacitance between the gate electrode and drain region. Additionally, the shield electrode increases the level of space charge limited current that can be supported in the drain region, and minimizes current crowding in the device.

Vertical MOSFET with an aligned gate electrode and aligned drain shield

Growing community of inventors

Hightstown, NJ, United States of America

Ramon Ubaldo Martinelli