Koninklijke Philips Corporation N.v.

Nxp B.v.

Ramon Jacob Havens

Ronald Dekker

Wibo Daniel Van Noort

Lis Karen Nanver

Celine Juliette Detcheverry

Petrus H C Magnee

Jan Baptist Petrus Henricus Van Der Putten

The invention relates to a semiconductor device () comprising a semiconductor body () with a high-ohmic semi-conductor substrate () which is covered with a dielectric layer () containing charges, on which dielectric layer one or more passive electronic components () comprising conductor tracks () are provided, wherein, at the location of the passive elements (), a region () is present at the interface between the semiconductor substrate () and the dielectric layer (), as a result of which the conductivity of an electrically conducting channel induced in the device () by the charges is limited at the location of the region (). According to the invention, the region () is formed by deposition and comprises a semi-insulating material. As a result, the device () has a very low high-frequency power loss because the inversion channel is formed in the semi-insulating region (). The device () further allows for a higher temperature budget and hence for the integration of active semiconductor elements () into the semiconductor body (). A very suitable semi-insulating material for the region () is SiC, SIPOS or POLYDOX.

Semiconductors device and method of manufacturing such a device

The invention relates to a method of manufacturing a semiconductor device () in which, in a semiconductor body () with a temporary substrate (), at least one semiconductor element () is formed which, on a side of the semiconductor body () opposite to the substrate (), is provided with at least one connection region (), and, on the said side, a dielectric () is formed and patterned to leave free the connection region (), after which a metal layer () is deposited over the dielectric () so as to be in contact with the connection region (), which metal layer () serves as an electric connection conductor of the connection region (), after which the temporary substrate () is removed and the metal layer () also serves as a substrate of the device (). According to the invention, before the metal layer () is deposited, there is formed, around the patterned part of the dielectric () and around the semiconductor element (), an annular region () of a resin having a larger thickness than the dielectric (), and the metal layer () is deposited within the rectangular annular region (). In this way, an individual device () can readily be formed after the metal layer () has been deposited, preferably by pushing the device () out of the region (). Preferably, a (different) photoresist is chosen for the dielectric () and the region (). The invention also comprises a semiconductor device () obtained in this way.

Method of manufacturing a semiconductor device and a semiconductor device obtained by means of said method

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Eindhoven, Netherlands

Ramon Jacob Havens