Western Digital Corporation

Opti, Inc.

Ramon Co

Kenneth W Ouyang

Kwok Fai Lee

Jui Liang

Jui C Liang

Ann Gui

A phase-locked loop wherein the output signal is effectively sampled at an increased rate from conventional phase-locked loops, allowing for a greater increase in the ratio of the output frequency to the input frequency while reducing the possibility of jitter or failure to lock. Multiple differently phased reference signals and correspondingly phased feedback signals are produced. The comparison of the feedback signals and the reference signals produce multiple error signals which are combined to adjust the oscillation frequency of the voltage-controlled oscillator.

Multiphase clock synthesizer having a plurality of phase shifted inputs

An integrated circuit electrostatic discharge (ESD) protection circuit employs a capacitor and a zener diode to trigger a thick oxide ESD shunt field effect transistor (FET). When an ESD induced voltage at an input or output node reaches the turn-on voltage determined by the zener diode breakdown voltage, the shunting transistor is turned on by current capacitively coupled to the base of the parasitic bipolar transistor inherently formed in the thick oxide FET. The parasitic bipolar transistor is turned on in its saturated mode, substantially shorting the node to ground. At the end of the ESD event when the ESD induced current is no longer sufficient to keep the shunting transistor in its saturated mode, the shunting transistor turns off and the ESD protection circuit returns to its off mode, monitoring the input or output node for the occurrence of another ESD event.

Capacitively induced electrostatic discharge protection circuit

A field effect transistor device formed on an integrated circuit chip substrate and driven by the on-chip voltages having a well region formed in the substrate, and source and drain regions one of which is formed in the well region. The well region has a lower doping concentration than the source and drain regions and is of the same conductivity type. The well region provides a reduced electric field gradient at the source/substrate or drain/substrate junction and significantly increases the breakdown resistance of the device to DC voltages higher than the on-chip voltages. An input/output protection circuit employing the field effect transistor coupled in series between an integrated circuit output pad and the active devices on the chip providing ability to withstand coupling of the pad to a relatively high DC voltages.

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Trabuco Canyon, CA, United States of America

Ramon Co