Qimonda Ag

Ramirez Xavier Veredas

Detlev Richter

Girolamo Gallo

Roberto Ravasio

Josef Willer

Andreas Kux

Gert Koebernik

Mirko Reissmann

In an embodiment, a method for transferring data in a memory device is provided. The method may include transferring data from a first memory cell arrangement including a plurality of memory cells to a second memory cell arrangement including a plurality of memory cells via a connecting circuit arrangement coupled to the plurality of memory cell arrangements and providing a plurality of controllable connections via a plurality of connecting circuit terminals, the memory cell arrangements being connected with at least one connecting circuit terminal of the plurality of connecting circuit terminals, wherein the connecting circuit is configured to provide arbitrarily controllable signal flow connections between the plurality of connecting circuit terminals. The data are transferred via a logic connection using the controllable connections. Simultaneously, a further logic connection may be provided to a memory cell arrangement of the memory cell arrangements using the controllable connections.

Memory device and method providing logic connections for data transfer

Embodiments of the invention relate generally to an integrated circuit having a memory cell arrangement and a method for reading a memory cell state using a plurality of partial readings. In an embodiment of the invention, an integrated circuit having a memory cell arrangement is provided. The memory cell arrangement may include at least one memory cell, the memory cell being capable of storing a plurality of memory cell states being distinguishable by a predefined number of memory cell threshold values, and a controller configured to read a memory cell state of the at least one memory cell using a number of reference levels that is higher than the predefined number of memory cell threshold values, wherein the reading includes a first partial reading using a first set of a plurality of reference levels and a second partial reading using a second set of a plurality of reference levels, wherein the second set of a plurality of reference levels includes at least one reference level which is different from the reference levels of the first set of a plurality of reference levels.

Integrated circuit having a memory cell arrangement and method for reading a memory cell state using a plurality of partial readings

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Munich, Germany

Ramirez Xavier Veredas