Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Rami Khazaka

Sylvie Menezo

Georgio El Zammar

Vincent Reboud

Yann Bogumilowicz

Herve Boutry

A light source comprises a GeSn active zone inserted between two contact zones. The active zone is formed directly on a silicon oxide layer by a first lateral epitaxial growth of a Ge germination layer followed by a second lateral epitaxial growth of a GeSn base layer. A cavity is formed between the contact zones by encapsulation and etching, so as to guide these lateral growths. A vertical growth of GeSn is then achieved from the base layer to form a structural layer. The active zone is formed in the stack of base and structural layers.

Method for producing a light source and light source

The present invention relates to a method for producing an element of a microelectronic device on a support comprising a base layer, an inserted layer and a covering layer. The method includes forming a confinement volume including an etching of the inserted layer selectively to the base layer and to the covering layer, and filling, by a filling material constituting the element, of at least one part of the confinement volume by an epitaxial growth of the material from the side wall. The formation of the confinement volume comprises a formation of a hole through the whole thickness of the covering layer, and the etching is an anisotropic etching done by applying an etching on the inserted layer through the hole.

Method of producing an element of a microelectronic device

The subject matter of the invention is a method for producing a lateral photodiode comprising a layer surmounted by a first pattern comprising an absorption region interposed between two contact regions. After encapsulation of the first pattern, a cavity is formed between the contact regions by etching through openings, and then filled with a material constituting the absorption region by lateral epitaxy of this material from the lateral walls of the cavity. According to one possibility, a first lateral epitaxy is effected in order to form a multiplication region, and then a second lateral epitaxy is effected in order to form a charge region before the lateral epitaxy of the material constituting the absorption region, so as to obtain a lateral avalanche photodiode having improved optical confinement. The lateral photodiode according to the invention has improved optical confinement.

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Grenoble, France

Rami Khazaka