Asm IP Holding B.v.

Rami Khazaka

Qi Xie

Lucas Petersen Barbosa Lima

John Tolle

Dieter Pierreux

Bert Jongbloed

Charles Dezelah

Giuseppe Alessio Verni

Joe Margetis

Michael Givens

Caleb Miskin

Steven Van Aerde

Kelly Houben

Peter Westrom

Wilco Verweij

Frederick Aryeetey

Omar Elleuch

Wonjong Kim

Some examples herein provide a method of forming a doped silicon germanium layer. The method may include simultaneously exposing a substrate to (a) a silicon precursor, (b), a germanium precursor, (c) a boron precursor, and (d) a heteroleptic gallium precursor. The heteroleptic gallium precursor may include (i) at least one straight chain alkyl group in which a terminal carbon is directly bonded to gallium, and (ii) at least one tertiary alkyl group in which a tertiary carbon is directly bonded to gallium. The method may include reacting the silicon precursor, the germanium precursor, the boron precursor, and the heteroleptic gallium precursor to form a silicon germanium layer on the substrate that is doped with boron and gallium.

Structures with boron- and gallium-doped silicon germanium layers and methods and systems for forming same

Methods and devices for epitaxially growing boron- and gallium-doped silicon germanium layers. The layers may be used, for example, as a p-type source and/or drain regions in field effect transistors.

Method for depositing boron and gallium containing silicon germanium layers

A method and a wafer processing furnace for forming an epitaxial stack on a plurality of substrates is provided. In a preferred embodiment, the method comprises providing the plurality of substrates to a process chamber. A plurality of deposition cycles is executed, thereby forming the epitaxial stack on the plurality of substrates. The epitaxial stack comprises a plurality of epitaxial pairs, wherein the epitaxial pairs each comprises a first epitaxial layer and a second epitaxial layer, the second epitaxial layer being different from the first epitaxial layer. Each deposition cycle comprises a first deposition pulse and a second deposition pulse. The first deposition pulse comprises a provision of a first reaction gas mixture to the process chamber, thereby forming the first epitaxial layer. The second deposition pulse comprises a provision of a second reaction gas mixture to the process chamber, thereby forming the second epitaxial layer. The first deposition pulse or the second deposition pulse further comprises a provision of a dopant precursor gas to the process chamber.

Method and wafer processing furnace for forming an epitaxial stack on a plurality of substrates

Methods and devices for epitaxially growing boron doped silicon germanium layers. The layers may be used, for example, as a p-type source and/or drain regions in field effect transistors.

Method for depositing boron containing silicon germanium layers

Methods and systems for depositing material, such as doped semiconductor material, are disclosed. An exemplary method includes providing a substrate, forming a first doped semiconductor layer overlying the substrate, and forming a second doped semiconductor layer overlying the first doped semiconductor layer, wherein the first doped semiconductor layer comprises a first dopant and a second dopant, and wherein the second doped semiconductor layer comprises the first dopant. Structures and devices formed using the methods and systems for performing the methods are also disclosed.

Structures with doped semiconductor layers and methods and systems for forming same

Methods and devices for low-temperature deposition of phosphorous-doped silicon layers. Disilane is used as a silicon precursor, and nitrogen or a noble gas is used as a carrier gas. Phosphine is a suitable phosphorous precursor.

Method for depositing low temperature phosphorous-doped silicon

Methods for forming structures that include a layer comprising silicon germanium are disclosed. Exemplary embodiments of the disclosure provide improved methods of forming a transition layer on the layer comprising silicon germanium that can mitigate any formation of an interface layer between the layer comprising silicon germanium and a subsequently formed layer comprising silicon.

Methods of forming silicon germanium structures

A method for selectively forming an n-type doped material on a surface of a substrate is disclosed. A system for performing the method and structures and devices formed using the method are also disclosed.

Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same

Methods and systems for selectively depositing material, such as doped semiconductor material, are disclosed. An exemplary method includes providing a substrate, comprising a first area comprising a first material and a second area comprising a second material, selectively depositing a first doped semiconductor layer overlying the first material relative to the second material and selectively depositing a second doped semiconductor layer overlying the first doped semiconductor layer relative to the second material.

Methods for selective deposition of doped semiconductor material

Methods and systems for selectively depositing a p-type doped silicon germanium layer and structures and devices including a p-type doped silicon germanium layer are disclosed. An exemplary method includes providing a substrate, comprising a surface comprising a first area comprising a first material and a second area comprising a second material, within a reaction chamber; depositing a p-type doped silicon germanium layer overlying the surface, the p-type doped silicon germanium layer comprising gallium; and depositing a cap layer overlying the p-type doped silicon germanium layer. The method can further include an etch step to remove the cap layer and the p-type doped silicon germanium layer overlying the second material.

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Leuven, Belgium

Rami Khazaka