USA As Represented by Secretary of the Navy

Ramasis Goswami

Syed B Qadri

Berend T Jonker

Connie H Li

Glenn Jernigan

Carl S Hellberg

Manoj K Kolel-Veetil

Raymond M Gamache

Noam Bernstein

An aluminum magnesium alloy with reduced Samson phase at grain boundaries made from the method of providing aluminum in a container, adding boron to the container, providing an inert atmosphere, arc-melting the aluminum and the boron, and mixing the aluminum and the boron in the container to form an alloy mixture. A method of suppressing the Samson phase, AlMg, at grain boundaries in Aluminum, comprising providing aluminum in a container, adding boron to the container, providing an inert atmosphere, arc-melting the aluminum and the boron, and mixing the aluminum and the boron in the container to form an alloy mixture.

Suppression of Samson phase formation in Al&#x2014;Mg alloys by boron addition

A method of suppressing the Samson phase, AlMg, at grain boundaries in Aluminum, comprising providing aluminum in a container, adding boron to the container, providing an inert atmosphere, arc-melting the aluminum and the boron, and mixing the aluminum and the boron in the container to form an alloy mixture. An aluminum magnesium alloy with reduced Samson phase at grain boundaries made from the method of providing aluminum in a container, adding boron to the container, providing an inert atmosphere, arc-melting the aluminum and the boron, and mixing the aluminum and the boron in the container to form an alloy mixture.

Suppression of samson phase formation in Al&#x2014;Mg alloys by boron addition

A 3C&#x2014;SiC buffer layer on Si(001) comprising a porous buffer layer of 3C&#x2014;SiC on a Si(001) substrate, wherein the porous buffer layer is produced through a solid state reaction, and wherein an amorphous carbon layer on the Si(001) substrate is deposited by magnetron sputtering of a C target at room temperature at a rate of 0.8 nm/min.

Solid phase epitaxy of 3C-SiC on Si(001)

A method and resulting composition made by: providing boron carbide and a dopant selected from silicon, aluminum, magnesium, and beryllium; and ball milling the boron carbide with the dopant until at least one out of fifteen of the boron and/or carbon atoms of the boron carbide are substituted with the dopant.

Insertion of elements within boron carbide

A method of making a SiC buffer layer on a Si substrate comprising depositing an amorphous carbon layer on a Si(001) substrate, controlling the thickness of the amorphous carbon layer by controlling the time of the step of depositing the amorphous carbon layer, and forming a deposited film. A 3C&#x2014;SiC buffer layer on Si(001) comprising a porous buffer layer of 3C&#x2014;SiC on a Si substrate wherein the porous buffer layer is produced through a solid state reaction.

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Alexandria, VA, United States of America

Ramasis Goswami