Applied Materials, Inc.

International Business Machines Corporation

Ramaseshan Suryanarayanan Iyer

Ashima B Chakravarti

Lee Luo

Yoshitaka Yokota

Aihua Chen

Anita Madan

Woo-Hyeong Lee

Janardhanan Anand Subramony

Gregory Wayne Dibello

A compound that includes at least Si, N and C in any combination, such as compounds of formula (R&#x2014;NH)SiXwherein R is an alkyl group (which may be the same or different), n is 1, 2 or 3, and X is H or halogen (such as, e.g., bis-tertiary butyl amino silane (BTBAS)), may be mixed with silane or a silane derivative to produce a film. A polysilicon silicon film may be grown by mixing silane (SiH) or a silane derviative and a compound including Si, N and C, such as BTBAS. Films controllably doped with carbon and/or nitrogen (such as layered films) may be grown by varying the reagents and conditions.

Deposition of carbon and nitrogen doped poly silicon films, and retarded boron diffusion and improved poly depletion

An oxide and an oxynitride films and their methods of fabrication are described. The oxide or the oxynitride film is grown on a substrate that is placed in a deposition chamber. A silicon source gas (or a silicon source gas with a nitridation source gas) and an oxidation source gas are decomposed in the deposition chamber using a thermal energy source. A silicon oxide (or an oxynitride) film is formed above the substrate wherein total pressure for the deposition chamber is maintained in the range of 50 Torr to 350 Torr and wherein a flow ratio for the silicon source gas (or the silicon source gas with the nitridiation source gas) and the oxidation source gas is in the range of 1:50 to 1:10000 during a deposition process.

Methods for silicon oxide and oxynitride deposition using single wafer low pressure CVD

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Santa Clara, CA, United States of America

Ramaseshan Suryanarayanan Iyer