Applied Materials, Inc.

Ramanujapuran A Srinivas

Mei Yin Chang

Michael Xiaoxuan Yang

Hua Chung

Ming Xi

Avgerinos V Gelatos

Ashok K Sinha

Alfred W Mak

Jeong Soo Byun

Ken Kaung Lai

Moris Kori

Hongbin Fang

Frederick C Wu

Embodiments of the invention provide methods for depositing tungsten materials. In one embodiment, a method for forming a composite tungsten film is provided which includes positioning a substrate within a process chamber, forming a tungsten nucleation layer on the substrate by subsequently exposing the substrate to a tungsten precursor and a reducing gas containing hydrogen during a cyclic deposition process, and forming a tungsten bulk layer during a plasma-enhanced chemical vapor deposition (PE-CVD) process. The PE-CVD process includes exposing the substrate to a deposition gas containing the tungsten precursor while depositing the tungsten bulk layer over the tungsten nucleation layer. In some example, the tungsten nucleation layer has a thickness of less than about 100 &#x212b;, such as about 15 &#x212b;. In other examples, a carrier gas containing hydrogen is constantly flowed into the process chamber during the cyclic deposition process.

Formation of composite tungsten films

Methods for the deposition of tungsten films are provided. The methods include depositing a nucleation layer by alternatively adsorbing a tungsten precursor and a reducing gas on a substrate, and depositing a bulk layer of tungsten over the nucleation layer.

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San Jose, CA, United States of America

Ramanujapuran A Srinivas