Intel Corporation

Tahoe Research, Ltd.

Ramanan Chebiam

Christopher J Jezewski

Tejaswi K Indukuri

Hui Jae Yoo

James S Clarke

Colin T Carver

Valery M Dubin

Manish Chandhok

Jeffery D Bielefeld

Carl H Naylor

Nafees Kabir

Matthew V Metz

Noriyuki Sato

Kevin Lai Lin

Mauro J Kobrinsky

Elijah V Karpov

James M Blackwell

Miriam Ruth Reshotko

Tristan A Tronic

Brennen Karl Mueller

Richard F Vreeland

Michael Christenson

William Brezinski

Jiun-Ruey Chen

John J Plombon

Chin-Chang Cheng

Brian S Doyle

Uday Shah

Kevin O'Brien

Scott Bruce Clendenning

Harsono S Simka

Sean W King

Satyarth Suri

Jasmeet S Chawla

Sridhar Balakrishnan

Daniel B Bergstrom

Srijit Mukherjee

Sudarat Lee

Tatyana N Andryushchenko

Flavio Griggio

Aranzazu Maestre Caro

Sunny Chugh

Damian Whitney

Tatyana N Andryushchen-Ko

IC interconnect structures including subtractively patterned features. Feature ends may be defined through multiple patterning of multiple cap materials for reduced misregistration. Subtractively patterned features may be lines integrated with damascene vias or with subtractively patterned vias, or may be vias integrated with damascene lines or with subtractively patterned lines. Subtractively patterned vias may be deposited as part of a planar metal layer and defined currently with interconnect lines. Subtractively patterned features may be integrated with air gap isolation structures. Subtractively patterned features may be include a barrier material on the bottom, top, or sidewall. A bottom barrier of a subtractively patterned features may be deposited with an area selective technique to be absent from an underlying interconnect feature. A barrier of a subtractively patterned feature may comprise graphene or a chalcogenide of a metal in the feature or in a seed layer.

Subtractively patterned interconnect structures for integrated circuits

Integrated circuitry interconnect structures comprising a first metal and a graphene cap over a top surface of the first metal. Within the interconnect structure an amount of a second metal, nitrogen, or silicon is greater proximal to an interface of the graphene cap. The presence of the second metal, nitrogen, or silicon may improve adhesion of the graphene to the first metal and/or otherwise improve electromigration resistance of a graphene capped interconnect structure. The second metal, nitrogen, or silicon may be introduced into the first metal during deposition of the first metal, or during a post-deposition treatment of the first metal. The second metal, nitrogen, or silicon may be introduced prior to, or after, capping the first metal with graphene.

Integrated circuit interconnect structures with graphene cap

An embodiment includes a metal interconnect structure, comprising: a dielectric layer disposed on a substrate; an opening in the dielectric layer, wherein the opening has sidewalls and exposes a conductive region of at least one of the substrate and an interconnect line; an adhesive layer, comprising manganese, disposed over the conductive region and on the sidewalls; and a fill material, comprising cobalt, within the opening and on a surface of the adhesion layer. Other embodiments are described herein.

Cobalt based interconnects and methods of fabrication thereof

A dielectric layer and a method of forming thereof. An opening defined in a dielectric layer and a wire deposited within the opening, wherein the wire includes a core material surrounded by a jacket material, wherein the jacket material exhibits a first resistivity ρ1 and the core material exhibits a second resistivity ρ2 and ρ2 is less than ρ1.

Interconnect wires including relatively low resistivity cores

An integrated circuit interconnect structure includes a first interconnect in a first metallization level and a first dielectric adjacent to at least a portion of the first interconnect, where the first dielectric having a first carbon content. The integrated circuit interconnect structure further includes a second interconnect in a second metallization level above the first metallization level. The second interconnect includes a lowermost surface in contact with at least a portion of an uppermost surface of the first interconnect. A second dielectric having a second carbon content is adjacent to at least a portion of the second interconnect and the first dielectric. The first carbon concentration increases with distance away from the lowermost surface of the second interconnect and the second carbon concentration increases with distance away from the uppermost surface of the first interconnect.

Interconnect structures and methods of fabrication

A dielectric layer and a method of forming thereof. An opening defined in a dielectric layer and a wire deposited within the opening, wherein the wire includes a core material surrounded by a jacket material, wherein the jacket material exhibits a first resistivity &#x3c1;1 and the core material exhibits a second resistivity &#x3c1;2 and &#x3c1;2 is less than &#x3c1;1.

Composite integrated circuit (IC) device structures that include two components coupled through a hybrid bonded composite interconnect structure. The two components may be two different monolithic IC structures (e.g., chips) that are bonded over substantially planar dielectric and metallization interfaces. Composite interconnect metallization features formed at a bond interface may be doped with a metal or chalcogenide dopant. The dopant may migrate to a periphery of the composite interconnect structure and form a barrier material that will then limit outdiffusion of a metal, such as copper, into adjacent dielectric material.

Metallization barrier structures for bonded integrated circuit interfaces

In one embodiment, a conductive connector for a microelectronic component may be formed with a noble metal layer, acting as an adhesion/wetting layer, disposed between a barrier liner and a conductive fill material. In a further embodiment, the conductive connector may have a noble metal conductive fill material disposed directly on the barrier liner. The use of a noble metal as an adhesion/wetting layer or as a conductive fill material may improve gapfill and adhesion, which may result in the conductive connector being substantially free of voids, thereby improving the electrical performance of the conductive connector relative to conductive connectors without a noble metal as the adhesion/wetting layer or the conductive fill material.

Use of noble metals in the formation of conductive connectors

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Hillsboro, OR, United States of America

Ramanan Chebiam