Agency for Science, Technology and Research

Ramana Murthy Badam

Vladimir Bliznetsov

My The Doan

Moitreyee Mukherjee-Roy

Chaoyong Li

Siaw Suian Sabrina Su

Chang Kuo Chang

Chi Fo Tsang

Rama Krishna Kotlanka

Ajay Agarwal

Levent Yobas

Xiang Jie Cyrus Foo

A probe element and a method of forming a probe element are provided. The probe element includes a carrier comprising biodegradable and/or bioactive material; and at least one electrode coupled to the carrier.

Probe element and method of forming a probe element

A semiconductor device, having a composite barrier layer, comprising the following. A substrate has a dielectric layer formed thereover and having an opening within the dielectric layer. The opening exposes a first portion of the substrate. A composite barrier layer lines the opening. The composite barrier layer comprises: a dielectric flash layer within the opening and lining the opening wherein the dielectric flash layer does not cover the first exposed portion of the substrate; an aluminum layer over the dielectric flash layer and over the first exposed portion of the substrate; and a barrier metal layer over the aluminum layer. Wherein the dielectric flash layer, the aluminum layer and the barrier metal layer comprise the composite barrier layer. A planarized metal plug is within the barrier metal layer lined opening.

Process of forming a composite diffusion barrier in copper/organic low-k damascene technology

Formation, through etching, of structures whose minimum width is less than can be achieved by optical means alone has been achieved by inserting a layer of sandwiching material between the photoresist (or hard mask if used) and the structure. By adjustment of the relative etch rates of this layer and the structure, a uniform lateral width reduction and surface smoothing of the structure is achieved.

Method to trim and smooth high index contrast waveguide structures

A method of forming a composite barrier layer comprising the following steps. A substrate having a dielectric layer formed thereover is provided. An opening exposing a first portion of the substrate is formed within the dielectric layer. A dielectric flash layer is formed within the opening and over the first exposed portion of the substrate. The dielectric flash layer lines the opening. The bottommost horizontal portion of the dielectric flash layer is removed to expose a second portion of the substrate. An aluminum layer is formed over the etched dielectric flash layer and over the second exposed portion of the substrate. A barrier metal layer is formed over the aluminum layer. The etched dielectric flash layer, the aluminum layer and the barrier metal layer comprise the composite barrier layer. A planarized metal plug is formed within the barrier metal layer lined opening.

Growing community of inventors

Singapore, Singapore

Ramana Murthy Badam