Globalfoundries Singapore Pte. Ltd.

Ramadas Nambatyathu

Purakh Raj Verma

Liang Yi

Yemin Dong

Zhanfeng Liu

Hai Cong

Zhehui Wang

A reliable metal insulator metal (MIM) capacitor is disclosed. The MIM capacitor is disposed over at least an interlevel dielectric (ILD) layer of a plurality of ILD layers with interconnects disposed over a substrate. The MIM capacitor includes a capacitor dielectric disposed between top and bottom metal capacitor electrodes. The edges of the top metal electrode at the interface with the capacitor dielectric are rounded. The rounded edges of the top capacitor electrode at the interface with the capacitor dielectric reduce edge electric field, thereby improves time-dependent dielectric breakdown (TDDB) reliability of the capacitor.

Metal-insulator-metal capacitor with improved time-dependent dielectric breakdown

A method of forming a device is disclosed. A substrate defined with a device region is provided. A gate having a gate electrode, first and second gate dielectric layers is formed in a trench. The trench has an upper trench portion and a lower trench portion. A field plate is formed in the trench. First and second diffusion regions are formed. The gate is displaced from the second diffusion region.

High voltage trench transistor

Growing community of inventors

Singapore, Singapore

Ramadas Nambatyathu