International Business Machines Corporation

Ramachandra Divkaruni

Kangguo Cheng

Carl John Radens

Oleg Gluschenkov

Dureseti Chidambarrao

Gary Bela Bronner

In a DRAM cell having a trench, a cell capacitor and a cell transistor, a node conducting element connects the cell capacitor to the cell transistor and a collar is disposed about the node conducting element. The collar is disposed in the substrate at least partially, up to entirely outside of the trench. Because the collar is disposed in the substrate outside of the trench, it does not restrict the size of the trench opening. This enables sub-100 nm trenches, using techniques which are compatible with contemporary DRAM process steps. A strap is embedded into a top surface of the collar.

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Ossining, NY, United States of America

Ramachandra Divkaruni