Osram Opto Semiconductors Gmbh

Osram Gmbh

Osram Opto Semiconductor Gmbh

Osram Opto Semi-conductors Gmbh Co. Ohg

Siemens Aktiengesellschaft

Osram Oled Gmbh

Osram Beteiligungsverwaltung Gmbh

Siteco Gmbh

Ralph Wirth

Walter Wegleiter

Bernd Barchmann

Klaus Streubel

Karl Weidner

Jan Marfeld

Reiner Windisch

Stefan Illek

Krister Bergenek

Andreas Ploessl

Alexander Linkov

Andreas Biebersdorf

Joerg Sorg

Matthias Sabathil

Jürgen Moosburger

Thomas Schwarz

Norwin Von Malm

Frank Jermann

Tony Albrecht

Lutz Höppel

Johannes Baur

Stefan Lange

Andreas Dobner

Norbert Linder

Markus Maute

Berthold Hahn

Herbert Brunner

Georg Bogner

Stefan Grötsch

Wolfgang Schmid

Patrick Rode

Stefan Groetsch

Julius Muschaweck

Franz Eberhard

Robert Kraus

Norbert Stath

Rainer Butendeich

Axel Kaltenbacher

Oliver Wutz

Wilhelm Stein

Ines Pietzonka

Peter Stauss

Robert Walter

Magnus Ahlstedt

Farhang Ghasemi Afshar

Dieter Eissler

Florian Boesl

Peter Heidborn

Gudrun Diepold

Andreas Plössl

Heribert Zull

Ralph Bertram

Gertrud Kraeuter

Andreas Plößl

Holger Huebner

Harald Jaeger

Vera Stöppelkamp

Hubert Maiwald

Sergey Kudaev

Horst Varga

Guenter Kirchberger

Mathieu Rayer

Dennis Sprenger

Meik Weckbecker

Christine Maier

Walter Wegletter

Klaus Steubel

Thomas Klafta

Michael Zoelfl

Markus Klein

An optoelectronic semiconductor component includes an optoelectronic semiconductor chip having a top area at a top side, a bottom area at an underside, at least one side area connecting the top area and the bottom area; electrical contact locations at the top area or at the bottom area of the optoelectronic semiconductor chip; and a molded body, wherein the molded body surrounds the optoelectronic semiconductor chip at all side areas at least in places, the molded body is electrically insulating, and the molded body is free of any conductive element that completely penetrates the molded body.

Optoelectronic semiconductor component

In an embodiment a vital sign sensor includes an emitter component configured to emit light, a detector component configured to detect light, a first layer of a substantially transparent material, wherein the emitter component is embedded in the first layer, and a second layer of a light scattering material arranged on the first layer, wherein the second layer includes converter particles, and wherein the first layer and the second layer are surrounded by at least one wall of a reflective material.

Vital sign sensor and method for manufacturing a vital sign sensor

A method of producing an optoelectronic semiconductor component includes providing a carrier; arranging at least one optoelectronic semiconductor chip at a top side of the carrier, wherein the semiconductor chip includes semiconductor layers deposited on a substrate; forming a shaped body around the at least one optoelectronic semiconductor chip, wherein the shaped body surrounds all side areas of the at least one optoelectronic semiconductor chip and at least some of the layers deposited on the substrate are free of the shaped body such that these layers are not covered or completely exposed; and removing the carrier.

An optoelectronic semiconductor component includes an optoelectronic semiconductor chip having a top area at a top side, a bottom area at an underside, side areas connecting the top area and the bottom area, and epitaxially produced layers; electrical n- and p-side contacts at the bottom area of the optoelectronic semiconductor chip; and an electrically insulating shaped body, wherein the shaped body surrounds the optoelectronic semiconductor chip at its side areas, and the epitaxially produced layers are free from the shaped body.

An LED unit comprises a substrate and a first LED chip. The first LED chip may include a first light-emitting surface arranged on the substrate in such a way that light emitted from the first LED chip radiates in a direction of radiation of the LED unit. The LED unit includes a second LED chip comprising a second light-emitting surface and arranged above the first LED chip in such a way that the second LED chip at least partially covers the first LED chip and radiates light emitted from the second LED chip in the direction of radiation of the LED unit. The LED unit comprises a first conversion layer at least partially covering the first light-emitting surface and/or at least partially laterally surrounding the first LED chip. A second conversion layer at least partially covers the second LED chip.

LED unit

A TOF camera for determining a distance to an object comprising: a radiation source configured to emit electromagnetic radiation toward the object, radiation-sensitive sensor elements configured and arranged to detect the electromagnetic radiation reflected/scattered by the object, an optical element arranged to influence the emitted electromagnetic radiation in the radiation path of the reflected/scattered electromagnetic radiation between the object and the sensor elements, a computing unit electrically connected to the radiation source and sensor elements configured to determine a time duration required by the electromagnetic radiation from the radiation source to the object; from the object to the sensor elements; and to determine the distance between the TOF camera and the object depending on the time duration determined. The sensor elements and/or the optical element are configured such that different sensor elements detect the reflected/scattered electromagnetic radiation from different solid angles on the far side of the optical element.

TOF camera, motor vehicle, method for producing a TOF camera and method for determining a distance to an object

A method of producing an optoelectronic semiconductor component includes providing a carrier, arranging at least one optoelectronic semiconductor chip at a top side of the carrier, applying a phosphor layer at the at least one semiconductor chip, forming a shaped body around the at least one optoelectronic semiconductor chip, wherein the shaped body surrounds all side areas of the at least one optoelectronic semiconductor chip, and removing the carrier, wherein the phosphor layer is applied before forming the shaped body.

An optoelectronic semiconductor chip having a semiconductor body () that is suitable for emitting electromagnetic radiation in a first wavelength range from a radiation exit face () is specified. Furthermore, the semiconductor chip comprises a ceramic or monocrystalline conversion platelet () that is suitable for converting electromagnetic radiation in the first wavelength range into electromagnetic radiation in a second wavelength range, which is different from the first wavelength range, and a wavelength-converting joining layer () that connects the conversion platelet () to the radiation exit face (), wherein the wavelength-converting joining layer () has luminescent material particles () that are suitable for converting radiation in the first wavelength range into radiation in a third wavelength range, which is different from the first wavelength range and the second wavelength range. The wavelength-converting joining layer () furthermore has a thickness of no more than 30 micrometers. A method for fabricating an optoelectronic semiconductor chip, a further semiconductor chip, conversion element and luminescent material are specified.

Optoelectronic semiconductor chip, method for producing an optoelectronic semiconductor chip, conversion element and phosphor for a conversion element

Various embodiments may relate to A light-emitting diode, including an LED chip having at least one emitter surface for emitting primary light, and a plurality of luminescent regions, which are connected optically downstream from the at least one emitter surface. At least one harder one of the luminescent regions is embedded in another, softer one of the luminescent regions.

Light-emitting diode including a plurality of luminescent regions

A component includes a carrier and a semiconductor body arranged on the carrier, wherein the semiconductor body has an active layer arranged between the first and second semiconductor layers and is configured to generate, during operation of the component, an electromagnetic radiation that can be coupled out from the component through a first main surface, the first main surface of the component has an electrical contact layer configured to electrically contact a first semiconductor layer and in a plan view the carrier covers the first main surface in places, and in direct vicinity of the electrical contact layer the component includes a shielding structure configured to prevent electromagnetic radiation generated by the active layer from impinging onto the contact layer.

Component having improved coupling-out properties

An optoelectronic semiconductor component includes a light-emitting semiconductor body having a radiation side, a current expansion layer arranged on the radiation side of the semiconductor body and at least partially covers this side, wherein the current expansion layer includes an electrically-conductive material transparent to the light radiated by the semiconductor body, and particles of a further material, and an electrical contact arranged on a side of the current expansion layer facing away from the semiconductor body.

Optoelectronic semiconductor component and method of producing an optoelectronic semiconductor component

An optoelectronic semiconductor component is disclosed. In an embodiment, the semiconductor component includes at least one optoelectronic semiconductor chip for generating primary radiation in a near-ultraviolet or in a visible spectral range, at least one phosphor for partial or complete conversion of the primary radiation into a longer-waved secondary radiation which is in the visible spectral range and at least one filter substance for partial absorption of the secondary radiation, wherein the phosphor and the filter substance are closely connected to the semiconductor chip.

An optoelectronic component for mixing electromagnetic radiation having different wavelengths, for example, for the far field is disclosed. In an embodiment the optoelectronic component includes a carrier, at least one first semiconductor chip arranged on the carrier and having a first radiation exit surface for emitting electromagnetic radiation in a first spectral range and at least one second semiconductor chip arranged on the carrier and having a second radiation exit surface for emitting electromagnetic radiation in a second spectral range, wherein a diffusing layer is arranged on the first and second radiation exit surfaces of the semiconductor chips that face away from the carrier and wherein a reflecting layer is arranged between the first semiconductor chip and the second semiconductor chip, the first and second radiation exit surfaces being free from the reflecting layer at least in regions.

Optoelectronic component

An optoelectronic semiconductor component includes an optoelectronic semiconductor chip having a top area at a top side, a bottom area at an underside, and side areas connecting the top area and the bottom area; electrical contact locations at the top area or at the bottom area of the optoelectronic semiconductor chip; and an electrically insulating shaped body, wherein the optoelectronic semiconductor chip is a flip-chip having the electrical contract locations only at one side, either the underside or the top side, the shaped body surrounds the optoelectronic semiconductor chip at its side areas, and the shaped body is free of a via that electrically connects the optoelectronic semiconductor chip.

Growing community of inventors

Lappersdorf, Germany

Ralph Wirth