Epcos Ag

Infineon Technologies Ag

Ralph Stoemmer

Habbo Heinze

Proposed is a resonator which works with bulk acoustic waves and is based on a layer structure known in the art, which is arranged over a substrate. According to the invention, the total surface of the layer structure, including all resonators contained therein, is covered with a dielectric layer and a metal layer which together form an acoustic mirror, a low-k dielectric being used for the dielectric layer. The total-surface mirror offers broadband functionality over a suitable frequency range. The dielectric contained within the mirror acts as a sealing protective layer for the resonator or resonators.

Resonator and component with hermetic encapsulation

The present invention relates to a method for fabricating a semiconductor device. In order to provide for a high carrier mobility in an active region of the device, germanium atoms are implanted into a surface of a semiconductor substrate such that a germanium-containing layer inside the semiconductor substrate is formed. Then, the surface of the semiconductor surface is oxidized down to and including the upper part of the germanium-containing layer, thereby pushing the implanted germanium atoms from the surface down into the semiconductor substrate and thereby enhancing the germanium concentration inside the remaining germanium-containing layer and forming a layer with enhanced germanium concentration inside the semiconductor substrate. The fabrication of the semiconductor device is concluded such that the active region of the device is placed at least partly within the layer with enhanced germanium concentration.

Method for fabricating a semiconductor device

An acoustic mirror includes constituent layers that are substantially odd multiples of &#x3bb;/4. The constituent layers include a first impedance layer and a second impedance layer, where the first impedance layer includes a first material having a first acoustic impedance and a first dielectric constant, and the second impedance layer includes a second material having a second acoustic impedance and a second dielectric constant. The second acoustic impedance is higher than the first acoustic impedance, and the first dielectric constant is lower than the second dielectric constant.

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Neubiberg, Germany

Ralph Stoemmer