Energy Conversion Devices, Inc.

Ralph Mohr

Stephen J Hudgens

Prem Nath

Chi C Yang

Annette G Johncock

Vincent D Cannella

An improved p-type semiconductor alloy film, an improved substantially intrinsic amorphous semiconductor alloy film, improved photovoltaic and photoresponsive devices incorporating such films and r.f. and microwave glow discharge methods for fabricating same. The improved semiconductor alloy films preferably include at least silicon deposited by the glow discharge of a compound containing at least silicon and a boron species that remains substantially monoatomic as it is incorporated into the silicon matrix. The p-type film is particularly stable, is characterized by a non-narrowed band gap, reduced bulk stress, improved morphology, growth and adhesion and reduced peeling and cracking. The substantially intrinsic film is characterized by substantially reduced Staebler-Wronski degradation. The method includes the novel step of introducing a boron species that does not form higher order boron hydrides or other boron polymers or oligomers in the glow discharge plasma.

Boron doped semiconductor materials and method for producing same

A microwave glow discharge method for the deposition of p-doped semiconductor alloy material, which material is characterized by mono-atomic and tetrahedral incorporation of boron species into the semiconductor host matrix, thereby providing a p-doped semiconductor alloy material characterized by reduced bulk strain, reduced nucleation of undesirable morphological growth, improved adhesion to a substrate and reduced peeling and cracking.

Method for the microwave fabrication of boron doped semiconductor

The open circuit voltage and efficiency of photovoltaic devices formed from multiple regions of semiconductor alloys including at least one narrow band gap semiconductor alloy are enhanced. The device includes a pair of doped regions and an intrinsic body between the doped regions. The intrinsic body includes a first intrinsic region and an open circuit voltage enhancement means including a second intrinsic region. The second intrinsic region has a wider band gap than the band gap of the first intrinsic region and is disposed between the first intrinsic region and one of the doped regions. The open circuit enhancement means can also include a third intrinsic region also having a wider band gap than the first intrinsic region and disposed on the side of the first intrinsic region opposite the second intrinsic region.

Growing community of inventors

Detroit, MI, United States of America

Ralph Mohr