Raytheon Company

USA as Represented by Secretary of the Navy

Ralph Korenstein

Steven D Bernstein

Christopher S Nordahl

Stephen J Pereira

William E Hoke

Mary K Herndon

Richard L Gentilman

Jeffrey R LaRoche

Catherine Trent

Robert W Gedridge, Jr

Joseph M Wahl

Chae Deok Lee

Stuart Jc Irvine

Huy Q Nguyen

Gary A Frazier

Kelvin T Higa

Randal W Tustison

Kyle L Grosse

Charles B Willingham

Patrick K Hogan

John S McCloy

Eric K Riedel

Lindley T Specht

Chae Doek Lee

Randall W Tustison

Eric Riedel

Jeffrey R Laroche

John S Mccloy

According to various aspects and embodiments, a system and method for providing an optical element is disclosed. In one example, the optical element includes a substrate formed from a Nanocomposite Optical Ceramic (NCOC) material that includes a first oxide nanograin material dispersed in a second oxide nanograin material, and a compressive layer of the NCOC material formed on a surface of the substrate.

Method of strengthening an optical element

Transparent IR conductive (TIRC) coatings used for EMI protection of, for example, longwave IR windows and domes are disclosed. In some non-limiting embodiments, the TIRC coating may be a BaCuSF coating. Related systems and methods are also disclosed.

Method for protecting IR transmitting windows and domes from EMI

A shortwave to midwave infrared (SWIR-MWIR) optical window includes a substrate formed from a nanocomposite optical ceramic material and a coating disposed on the substrate to provide electromagnetic interference (EMI) protection. The coating is electrically conductive and SWIR-MWIR transparent and comprises a doped zinc oxide material. A method of protecting an EO/IR sensor from electromagnetic interference (EMI) includes depositing a thin film electrically conductive and SWIR-MWIR transparent coating over a surface an optical window of the EO/IR sensor. The optical window is formed from a nanocomposite optical ceramic material and has a curved surface. The thin film electrically conductive and SWIR-MWIR transparent coating comprises an electrically conductive zinc oxide material.

SWIR-MWIR transparent, conductive coating for EMI protection of NCOC

A dynamic aperture is disclosed. A dynamic aperture includes a base layer, a conductive structure disposed on the base layer, and a layer of a material having a dynamically controllable electrical conductivity that is disposed over the base layer and the conductive structure. A transmission profile of the dynamic aperture is determined by a combination of the conductive structure and the layer of the material. The transmission profile is dynamically alterable by controlling the electrical conductivity of the layer of the material.

Apertures with dynamically variable electromagnetic properties

Fluoride-based nanocomposite materials, optical articles made therefrom, and methods of making the fluoride-nanocomposite materials and optical articles. In certain examples, a fluoride-based nanocomposite material includes two or more interspersed fluoride-based nanograin materials with grains having one, two, or three dimensions that are less than 1 micrometer.

Fluoride-based nanocomposite materials for infrared window applications

Systems and method for forming a nanocomposite material. One example of a nanocomposite material includes a first sulfur-based nanoparticle material defining a first nanophase and a second sulfur-based nanoparticle material defining a second nanophase, wherein the nanocomposite material is at least partially long-wave infrared (LWIR) transmitting, and the first nanophase and the second nanophase are co-dispersed to form interpenetrating networks with one another and each has a grain structure that is distinct from one another.

Long wave infrared transparent window and coating materials

An apparatus includes a beta particle source configured to provide beta particles. The apparatus also includes a diamond moderator configured to convert at least some of the beta particles into lower-energy electrons. The apparatus further includes a PN junction configured to receive the electrons and to provide electrical power to a load. The diamond moderator is located between the beta particle source and the PN junction. The apparatus could also include an electron amplifier configured to bias the diamond moderator. For example, the electron amplifier could be configured to receive some of the beta particles and to generate additional electrons that bias the diamond moderator. Also, the diamond moderator can be configured to receive the beta particles having energies that are spread out over a wider range including higher energies, and the diamond moderator can be configured to provide the electrons concentrated in a narrower range at lower energies.

Betavoltaic battery with diamond moderator and related system and method

A semiconductor structure is bonded directly to a diamond substrate by Van der Waal forces. The diamond substrate is formed by polishing a surface of diamond to a first degree of smoothness; forming a material, such as diamond, BeO, GaN, MgO, or SiOor other oxides, over the polished surface to provide an intermediate structure; and re-polishing the material formed on the intermediate structure to a second degree of smoothness smoother than the first degree of smoothness. The diamond is bonded to the semiconductor structure, such as GaN, by providing a structure having bottom surfaces of a semiconductor on an underlying material; forming grooves through the semiconductor and into the underlying material; separating semiconductor along the grooves into a plurality of separate semiconductor structures; removing the separated semiconductor structures from the underlying material; and contacting the bottom surface of at least one of the separated semiconductor structures to the diamond substrate.

Semiconductor structures having directly bonded diamond heat sinks and methods for making such structures

In one aspect, a device includes a gallium nitride (GaN) layer, a first diamond layer disposed on the GaN layer, a gate structure disposed in contact with the GaN layer and the first diamond layer, and a second diamond layer having a first thermal conductivity and disposed on a second surface of the GaN layer. The gate and the first diamond layer are disposed on a first surface of the GaN layer opposite the second surface of the GaN layer.

Gallium nitride device with a diamond layer

In one aspect, a method includes fabricating a device. The device includes a gallium nitride (GaN) layer, a diamond layer disposed on the GaN layer and a gate structure disposed in contact with the GaN layer and the diamond layer. In another aspect, a device includes a gallium nitride (GaN) layer, a diamond layer disposed on the GaN layer and a gate structure disposed in contact with the GaN layer and the diamond layer.

Fabricating a gallium nitride device with a diamond layer

A heterostructure having a heterojunction comprising: a diamond layer; and a boron aluminum nitride (BAlN) layer disposed in contact with a surface of the diamond layer, where x is between 0 and 1.

Boron aluminum nitride diamond heterostructure

In one aspect, a method includes fabricating a gallium nitride (GaN) layer with a first diamond layer having a first thermal conductivity and a second diamond layer having a second thermal conductivity greater than the first thermal conductivity. The fabricating includes using a microwave plasma chemical vapor deposition (CVD) process to deposit the second diamond layer onto the first diamond layer.

Growing community of inventors

Framingham, MA, United States of America

Ralph Korenstein