Infineon Technologies Ag

Other

Infineon Technologies Sc300 Gmbh & Co., Kg

Ralf Zedlitz

Stephan Wege

Dirk Drescher

Joerg Dreybrodt

Karl Emerson Mautz

Alfred Kersch

Bruno Spuler

Iraj Eric Shahvandi

Terry Alan Breeden

Georg Schulze-Icking

Michael Thomas Tucker

Thomas Witke

Olivier Gerard Marc Vatel

Winfried Sabisch

A PVD method and a PVD apparatus use a rotating magnetic field in order to increase the yield. The magnetic field is provided such that it essentially vanishes, at least in a time average, outside a rotation axis of the magnetic field in sectors of the target region of the PVD apparatus. In this manner the PVD method and the PVD apparatus achieve a uniform coating.

PVD method and PVD apparatus

A semiconductor device and a method for manufacturing the semiconductor device with a self-aligned contact, is described. A first conductor and a second conductor are formed on the surface of the semiconductor substrate. The first conductor and the second conductor are encapsulated with a first encapsulation and a second encapsulation, respectively. The first encapsulation and the second encapsulation contain titanium oxide, boron nitride, silicon carbide, magnesium oxide or carbon. The first encapsulation and the second encapsulation are suitable as a self-aligning etch mask for etching a self-aligned contact hole between the first conductor and the second conductor.

Semiconductor device with self-aligned contact and method for manufacturing the device

Doped polysilicon layers and layered polysilicon structures are produced, and the layers and layered structures are structured. The doping is distinguished by the fact that the doping compound is added as a process gas during the chemical vapor deposition of the polysilicon to define the doping profile. The feed of dopant to the process gas is stopped toward the end of the vapor deposition, with the result that a boundary layer of undoped silicon is deposited. As a result, a favorable surface quality and better adhesion to a neighboring layer is obtained. The structuring process comprises an at least three-step etching process in which a fluorine containing gas is used for etching in a first step, a chlorine-containing gas is used for etching in a second step and a bromine-containing gas is used for etching in a third step. The invention also encompasses wafers and semiconductor chips produced with the novel doping and/or structuring method.

CVD method of producing in situ-doped polysilicon layers and polysilicon layered structures

Doped polysilicon layers and layered polysilicon structures are produced, and the layers and layered structures are structured. The doping is distinguished by the fact that the doping compound is added as a process gas during the chemical vapor deposition of the polysilicon to define the doping profile. The feed of dopant to the process gas is stopped toward the end of the vapor deposition, with the result that a boundary layer of undoped silicon is deposited. As a result, a favorable surface quality and better adhesion to a neighboring layer is obtained. The structuring process comprises an at least three-step etching process in which a fluorine containing gas is used for etching in a first step, a chlorine-containing gas is used for etching in a second step and a bromine-containing, gas is used for etching in a third step. The invention also encompasses wafers and semiconductor chips produced with the novel doping and/or structuring method.

Method of structuring layers with a polysilicon layer and an overlying metal or metal silicide layer using a three step etching process with fluorine, chlorine, bromine containing gases

In a CVD chamber ( ) having a chuck ( ) to hold a semiconductor substrate ( ) and having a plasma generator ( ) to generate a plasma ( ), a trench in the substrate is filled with dielectric material from ions ( ) of the plasma. The ions are forced to move in a direction ( ) that is substantially perpendicular to the surface of the substrate by a pulsed unidirectional voltage between the plasma generator and the substrate, by a circular magnetic field, or by a combination of both fields.

Plasma-enhanced chemical vapor deposition (CVD) method to fill a trench in a semiconductor substrate

Growing community of inventors

Dresden, Germany

Ralf Zedlitz