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Fraunhofer-gesellschaft Zur Foerderung Der Angewandten Forschung E.v.

Max-planck-gesellschaft Zur F&#xf6;rderung Der Wissenschaften E. V.

Ralf Wehrspohn

Stephen Wesley Leonard

Ulrich Gosele

Henry M Van Driel

Stefan Senz

Martin Steinhart

Jorg Schilling

A three-dimensional molded body, a method for producing a three-dimensional molded body and a method for producing an adhesive bond between a polymer-containing material and a molded body having an inorganic porous framework structure in at least partial areas are described. In all cases the porous structure of the molded body comprising inorganic material is brought in contact with a polymer-containing material which is heated until the heated material enters into a joint connection with the molded body based on adhesive interactions, interfacial interactions, electrostatic interactions or any combination thereof, in which the pore-like voids of the porous structure are filled completely with the polymer-containing material, which stabilizes the molded body so that it has dimensional stability after cooling.

Method for producing a 3-dimensional molded body comprising polymer-containing material and a method for producing an adhesive bond between a polymer-containing material and a three-dimensional molded body

The present invention provides a method for fast switching of optical properties in photonic crystals using pulsed/modulated free-carrier injection. The results disclosed herein indicate that several types of photonic crystal devices can be designed in which free carriers are used to vary dispersion curves, stop gaps in materials with photonic bandgaps to vary the bandgaps, reflection, transmission, absorption, gain, or phase. The use of pulsed free carrier injection to control the properties of photonic crystals on fast timescales forms the basis for all-optical switching using photonic crystals. Ultrafast switching of the band edge of a two-dimensional silicon photonic crystal is demonstrated near a wavelength of 1.9 &#x3bc;m. Changes in the refractive index are optically induced by injecting free carriers with 800 nm, 300 fs pulses. Band-edge shifts have been induced in silicon photonic crystals of up to 29 nm that occurs on the time-scale of the pump pulse. The present invention also provides a method of producing a virtual or temporary photonic crystal using free carrier injection into pure semiconductors, bulk or thin film, in which the carriers are generated in patterns which create a patterned refractive index contrast used to steer light beams in the semiconductor while it is being pulsed.

Method of varying optical properties of photonic crystals on fast time scales using energy pulses

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Halle, Germany

Ralf Wehrspohn